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50MT060ULSTA

Description
100 A, 600 V, N-CHANNEL IGBT
CategoryDiscrete semiconductor    The transistor   
File Size218KB,10 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

50MT060ULSTA Overview

100 A, 600 V, N-CHANNEL IGBT

50MT060ULSTA Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, R-XUFM-X13
Contacts13
Reach Compliance Codecompliant
Shell connectionISOLATED
Maximum collector current (IC)100 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X13
JESD-609 codee0
Number of components1
Number of terminals13
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)445 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Base Number Matches1
Bulletin I27191 02/05
50MT060ULSA
50MT060ULSTA
"LOW SIDE CHOPPER" IGBT MTP
Features
• Gen. 4 Ultrafast Speed IGBT Technology
• HEXFRED
TM
Diode with UltraSoft
Reverse Recovery
• Very Low Conduction and Switching
Losses
• Optional SMD Thermistor (NTC)
• Al
2
O
3
DBC
• Very Low Stray Inductance Design for
High Speed Operation
• UL approved ( file E78996 )
Ultrafast Speed IGBT
V
CES
= 600V
I
C
= 100A,
T
C
= 25°C
Benefits
• Optimized for Welding, UPS and SMPS
Applications
• Operating Frequencies > 20 kHz Hard
Switching, >200 kHz Resonant Mode
• Low EMI, requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Very Low Junction-to-Case Thermal
Resistance
MMTP
Absolute Maximum Ratings
Parameters
V
CES
I
C
I
CM
I
LM
I
F
Max
600
@ T
C
= 25°C
@ T
C
= 122°C
100
50
200
200
@ T
C
= 100°C
48
200
± 20
2500
445
175
205
83
IGBT
Diode
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
Units
V
A
Collector-to-Emitter Voltage
Continuos Collector Current
Pulsed Collector Current
Peak Switching Current
Diode Continuous Forward Current
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power
Dissipation
I
FM
V
GE
V
ISOL
P
D
V
W
www.irf.com
1

50MT060ULSTA Related Products

50MT060ULSTA 50MT060ULSA
Description 100 A, 600 V, N-CHANNEL IGBT 100 A, 600 V, N-CHANNEL IGBT
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction FLANGE MOUNT, R-XUFM-X13 FLANGE MOUNT, R-XUFM-X13
Contacts 13 13
Reach Compliance Code compliant compliant
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 100 A 100 A
Collector-emitter maximum voltage 600 V 600 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Gate-emitter maximum voltage 20 V 20 V
JESD-30 code R-XUFM-X13 R-XUFM-X13
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 13 13
Maximum operating temperature 150 °C 150 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 445 W 445 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface TIN LEAD TIN LEAD
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications POWER CONTROL POWER CONTROL
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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