HUR3020CT, HUR3030CT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
A
C(TAB)
A
C
A
C
A
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
A=Anode, C=Cathode, TAB=Cathode
HUR3020CT
HUR3030CT
V
RSM
V
200
300
V
RRM
V
200
300
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
T
C
=25
o
C
mounting torque
typical
o
Test Conditions
T
C
=135 C; rectangular, d=0.5
T
VJ
=45
o
C; t
p
=10ms (50Hz), sine
T
VJ
=25
o
C; non-repetitive; I
AS
=2.5A; L=180uH
V
A
=1.5
.
V
R
typ.; f=10kHz; repetitive
Maximum Ratings
35
2 x 15
140
0.8
0.3
-55...+175
175
-55...+150
95
0.4...0.6
2
Unit
A
A
mJ
A
o
C
W
Nm
g
HUR3020CT, HUR3030CT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Symbol
T
VJ
=25
o
C; V
R
=V
RRM
T
VJ
=150
o
C; V
R
=V
RRM
I
F
=15A; T
VJ
=150
o
C
T
VJ
=25
o
C
Test Conditions
Characteristic Values
typ.
max.
100
0.5
1.21
1.68
1.6
0.5
Unit
uA
mA
V
K/W
ns
I
R
V
F
R
thJC
R
thCH
t
rr
I
RM
I
F
=1A; -di/dt=100A/us; V
R
=30V; T
VJ
=25
o
C
V
R
=100V; I
F
=25A; -di
F
/dt=100A/us; T
VJ
=100
o
C
30
2.7
A
FEATURES
* International standard package
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low I
RM
-values
* Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ADVANTAGES
* Avalanche voltage rated for reliable
operation
* Soft reverse recovery for low
EMI/RFI
* Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
HUR3020CT, HUR3030CT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
40
A
I
F
30
T
VJ
= 150°C
T
VJ
= 100°C
20
T
VJ
= 25°C
200
10
100
5
Q
r
300
500
T
VJ
= 100°C
nC
400
I
RM
I
F
= 30A
I
F
= 15A
I
F
= 7.5A
10
15
V
R
= 150V
A
20
T
VJ
= 100°C
V
R
= 150V
I
F
= 30A
I
F
= 15A
I
F
= 7.5A
0
0
1
V
F
V
2
0
100
0
A/us 1000
-di
F
/dt
0
200
400
600 A/us 1000
800
-di
F
/dt
Fig. 1 Forward current I
F
versus V
F
1.4
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
80
ns
T
VJ
= 100°C
V
R
= 150V
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
14
V
12
V
FR
t
fr
V
FR
T
VJ
= 100°C
I
F
= 15A
0.85
us
0.80
t
fr
0.75
1.2
K
f
t
rr
70
I
F
= 30A
I
F
= 15A
I
F
= 7.5A
60
1.0
I
RM
Q
r
0.8
40
50
10
8
0.70
6
0.65
0.6
0
40
80
120 °C 160
T
VJ
30
0
200
400
600
-di
F
/dt
800
A/us 1000
4
0
200
400
0.60
600 A/us 1000
800
di
F
/dt
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
10
K/W
1
Z
thJC
0.1
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
Constants for Z
thJC
calculation:
i
1
2
3
R
thi
(K/W)
0.908
0.35
0.342
t
i
(s)
0.005
0.0003
0.017
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
t
s
1
Fig. 7 Transient thermal resistance junction to case
Analogue and Mixed Signal
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