GMM7328110CS/SG-6/7/8
8,388,608 WORDS x 32 BIT
CMOS DYNAMIC RAM MODULE
Description
The GMM7328110CS/SG is an 8M x 32 bits
Dynamic RAM MODULE which is
assembled 16 pieces of 4M x 4bit EDO
DRAMs in 24(26) pin SOJ package on both
sides the printed circuit board with decoupling
capacitors. The GMM7328110CS/SG is
optimized for application to the systems
which are required high density and large
capacity such as main memory of the
computers and an image memory systems,
and to the others which are requested compact
size. The GMM7328110CS/SG provides
common data inputs and Extended Data
Outputs.
GMM7328110CS/SG
(Both Side)
Features
* 72 pins Single In-Line Package
- GMM7328110CS : Solder plating
- GMM7328110CSG : Gold plating
* Extended Data Out (EDO) Mode Capability
* Single Power Supply
* Fast Access Time & Cycle Time
(Unit: ns)
t
RAC
t
CAC
t
RC
GMM7328110CS/SG-6
GMM7328110CS/SG-7
GMM7328110CS/SG-8
60
70
80
15
18
20
104
124
144
t
HPC
25
30
35
* Low Power
Active : 4,928/4,488/4,048 mW (MAX)
Standby : 88mW (CMOS level : MAX)
* RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
* All inputs and outputs TTL Compatible
* 2048 Refresh Cycles/ 32ms
1
36
37
72
Pin Configuration
(Top View)
Pin Symbol Pin Symbol Pin Symbol Pin Symbol
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
V
SS
DQ
0
DQ
16
DQ
1
DQ
17
DQ
2
DQ
18
DQ
3
DQ
19
V
CC
NC
A
0
A
1
A
2
A
3
A
4
A
5
A
6
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
A
10
DQ
4
DQ
20
DQ
5
DQ
21
DQ
6
DQ
22
DQ
7
DQ
23
A
7
NC
V
CC
A
8
A
9
RAS
3
RAS
2
NC
NC
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
NC
NC
V
SS
CAS
0
CAS
2
CAS
3
CAS
1
RAS
0
RAS
1
NC
WE
NC
DQ
8
DQ
24
DQ
9
DQ
25
DQ
10
DQ
26
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
DQ
11
DQ
27
DQ
12
DQ
28
V
CC
DQ
29
DQ
13
DQ
30
DQ
14
DQ
31
DQ
15
NC
PD
1
PD
2
PD
3
PD
4
NC
V
SS
1
GMM7328110CS/SG
Block Diagram
CAS0
RAS0
CAS
RAS
OE
CAS
RAS
OE
WE
M1
A0-A10
WE
M0
A0-A10
I/O1
I/O2
I/O3
I/O4
I/O1
I/O2
I/O3
I/O4
DQ0-DQ3
I/O1
I/O2
I/O3
I/O4
I/O1
I/O2
I/O3
I/O4
CAS
M8
A0-A10
WE
RAS
OE
CAS
M9
A0-A10
WE
RAS
OE
RAS1
DQ4-DQ7
CAS1
CAS
RAS
OE
CAS
M3
RAS
OE
WE
A0-A10
WE
M2
A0-A10
I/O1
I/O2
I/O3
I/O4
I/O1
I/O2
I/O3
I/O4
DQ8-DQ11
I/O1
I/O2
I/O3
I/O4
I/O1
I/O2
I/O3
I/O4
CAS
M10
A0-A10
WE
RAS
OE
CAS
M11
RAS
A0-A10
WE
OE
DQ12-DQ15
CAS2
RAS2
CAS
RAS
OE
CAS
RAS
OE
WE
M5
A0-A10
WE
M4
A0-A10
I/O1
I/O2
I/O3
I/O4
I/O1
I/O2
I/O3
I/O4
DQ16-DQ19
I/O1
I/O2
I/O3
I/O4
I/O1
I/O2
I/O3
I/O4
CAS
M12
A0-A10
WE
RAS
OE
CAS
M13
A0-A10
WE
RAS
OE
RAS3
DQ20-DQ23
CAS3
CAS
RAS
OE
CAS
RAS
OE
WE
M7
A0-A10
WE
M6
A0-A10
I/O1
I/O2
I/O3
I/O4
I/O1
I/O2
I/O3
I/O4
DQ24-DQ27
I/O1
I/O2
I/O3
I/O4
I/O1
I/O2
I/O3
I/O4
CAS
M14
A0-A10
WE
RAS
OE
CAS
M15
A0-A10
WE
RAS
OE
DQ28-DQ31
WE
A0-A10
V
CC
C0-C7
V
SS
M0-M15
M0-M15
*M0-M15 : 4M x 4 EDO DRAM
*C0-C7 : 0.22uF Capacitor
2
GMM7328110CS/SG
Pin Description
Pin
A0-A10
DQ0-DQ31
RAS0-RAS3
CAS0-CAS3
WE
Function
Address Inputs
Data Input/Output
Row Address Strobe
Column Address Strobe
Read/Write Enable
Pin
PD1-PD4
V
CC
V
SS
NC
Function
Presence Detect
Power (+5V)
Ground
No Connection
Presence Detect Pins
(Optional)
Pin
PD1
PD2
PD3
PD4
60ns
NC
V
SS
NC
NC
70ns
NC
V
SS
V
SS
NC
80ns
NC
V
SS
NC
V
SS
Absolute Maximum Ratings*
Symbol
T
A
T
STG
V
IN
/V
OUT
V
CC
I
OUT
P
D
Parameter
Ambient Temperature under Bias
Storage Temperature (Plastic)
Voltage on any Pin Relative to V
SS
Power Supply Voltage
Short Circuit Output Current
Power Dissipation
Rating
0 ~ 70
-55 ~ 125
-1.0 ~ 7.0
-1.0 ~ 7.0
50
16
Unit
C
C
V
V
mA
W
*
Note: 1. Stress greater than above
“ A
solute Maximum Ratings?may cause permanent damage to the device.
b
Recommended DC Operating Conditions
(T
A
= 0 ~ 70C)
Symbol
V
CC
V
IH
V
IL
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Min
4.5
2.4
-1.0
Typ
5.0
-
-
Max
5.5
6.5
0.8
Unit
V
V
V
Note
1
1
1
*
Note: 1. All voltages referenced to V
SS
.
3
GMM7328110CS/SG
DC Electrical Characteristics
(V
CC
= 5V+/-10%, T
A
= 0 ~ 70C)
Symbol
V
OH
V
OL
I
CC1
Parameter
Output Level
Output
“ H
?Level Voltage (I
OUT
= -5mA)
Output Level
Output
“ L
Level Voltage (I
OUT
= 4.2mA)
?
Operating Current
Average Power Supply Operating Current
(RAS, CAS, Address Cycling: t
RC
= t
RC
min
)
60ns
70ns
80ns
Min
2.0
0
-
-
-
-
Max
V
CC
0.4
896
816
736
32
Unit
V
V
Note
mA
1, 2
I
CC2
Standby Current (TTL)
Power Supply Standby Current
(RAS, CAS = V
IH
)
RAS Only Refresh Current
Average Power Supply Current
RAS Only Mode
(RAS Cycling, CAS = V
IH
, t
RC
= t
RC
min
)
EDO Page Mode Current
Average Power Supply Current
EDO Page Mode
(RAS = V
IL
, CAS, Address Cycling: t
HPC
= t
HPC
min
)
Standby Current (CMOS)
Power Supply Standby Current
(RAS, CAS>=V
CC
-0.2V)
CAS before RAS Refresh Current
(t
RC
= t
RC
min
)
60ns
70ns
80ns
60ns
70ns
80ns
60ns
70ns
80ns
mA
I
CC3
-
-
-
-
-
-
-
896
816
736
896
816
736
16
mA
mA
1, 3
mA
2
I
CC4
I
CC5
I
CC6
-
-
-
-
896
816
736
80
mA
1
mA
I
CC7
Standby Current RAS = V
IH
CAS = V
IL
D
OUT
= Enable
Input Leakage Current
Any Input (0V<=V
IN
<=7V)
All Other Pins Not Under Test = 0V
Output Leakage Current
(D
OUT
is Disabled, 0V<=V
OUT
<=7V)
I
I(L)
-160
-20
160
20
uA
uA
I
O(L)
Note: 1. I
CC
depends on output load condition when the device is selected. I
CC
(max) is specified at the output open
condition.
2. Address can be changed once or less while RAS = V
IL
.
3. Address can be changed once or less while CAS = V
IH
.
4
GMM7328110CS/SG
Capacitance
(V
CC
= 5V+/-10%, T
A
= 25C, f = 1MHz)
Symbol
C
I1
C
I2
C
13
C
14
C
I/O
Parameter
Input Capacitance (A0~A10)
Input Capacitance (WE)
Input Capacitance (RAS0~RAS3)
Input Capacitance (CAS0~CAS3)
I/O Capacitance (DQ0~DQ31)
Min
-
-
-
-
-
Max
60
70
40
30
17
Unit
pF
pF
pF
pF
pF
Note
1
1, 2
1, 2
1, 2
1, 2
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. CAS = V
IH
to disable D
OUT
.
AC Electrical Characteristics
(V
CC
= 5V+/-10%, T
A
= 0 ~ 70C, Notes 1, 15)
The GMM7328110CS/SG writes data only in early write cycle (twcs>=twcs(min)).
Delayed write cycle is not available because of I/O common.
Read, Write and Refresh Cycle
(Common Parameters)
Symbol
Parameter
Random Read or Write Cycle Time
RAS Precharge Time
RAS Pulse Width
CAS Pulse Width
Row Address Setup Time
Row Address Hold Time
Column Address Setup Time
Column Address Hold Time
RAS to CAS Delay Time
RAS to Column Address Delay Time
RAS Hold Time
CAS Hold Time
CAS to RAS Precharge Time
Transition Time (Rise and Fall)
Refresh Period ( 2048 Cycles )
GMM7328110
CS/SG-6
GMM7328110
CS/SG-7
GMM7328110
CS/SG-8
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
Note
Min
Max
-
-
Min
124
50
Max
-
-
Min
144
60
Max
-
-
t
RC
t
RP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
T
t
REF
104
40
60 10,000
10 10,000
0
10
0
10
20
15
15
60
5
2
-
-
-
-
-
45
30
-
-
-
50
32
70 10,000
13 10,000
0
10
0
13
20
15
18
70
5
2
-
-
-
-
-
52
35
-
-
-
50
32
80 10,000
15 10,000
0
10
0
15
20
15
20
80
5
2
-
-
-
-
-
60
40
-
-
-
50
32
9
10
8
5
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