MBR2*80
Wide Temperature Range and High T
jm
Schottky Barrier Rectifiers
Dimensions SOT-227(ISOTOP)
Dim.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min.
Max.
31.50
7.80
4.09
4.09
4.09
14.91
30.12
37.80
11.68
8.92
0.76
12.60
25.15
1.98
4.95
26.54
3.94
4.72
24.59
-0.05
3.30
0.780
31.88
8.20
4.29
4.29
4.29
15.11
30.30
38.20
12.22
9.60
0.84
12.85
25.42
2.13
5.97
26.90
4.42
4.85
25.07
0.1
4.57
0.830
Inches
Min.
Max.
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.489
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
-0.002
0.130
19.81
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
0.180
21.08
MBR2*80-30
MBR2*80-40
MBR2*80-45
Symbol
I
FRMS
I
FAVM
I
FAVM
I
FSM
E
AS
I
AR
(dv/dt)
cr
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
M
d
Weight
Symbol
T
C
=25
o
C
o
V
RSM
V
30
40
45
V
RRM
V
30
40
45
Test Conditions
L
M
N
O
P
Q
R
S
T
U
V
W
Maximum Ratings
100
80
160
900
57
2
1000
-40...+150
150
-40...+150
150
2500
1.1-1.5/9-13
30
Unit
A
A
mJ
A
V/us
o
T
C
=75 C; rectangular, d=0.5
o
T
C
=75 C; rectangular, d=0.5; per device
T
VJ
=45
o
C; t
p
=10ms (50Hz), sine
I
AS
=20A; L=180uH; T
VJ
=25
o
C; non-repetitive
V
A
=1.5
.
V
RRM
typ.; f=10kHz; repetitive
C
W
V~
Nm/lb.in.
g
Unit
_
50/60Hz, RMS; I
ISOL
<1mA
mounting torque (M4); terminal connection torque (M4)
typical
Test Conditions
T
VJ
=25
o
C; V
R
=V
RRM
T
VJ
=100
o
C; V
R
=V
RRM
I
F
=80A; T
VJ
=125
o
C
I
F
=80A; T
VJ
=25
o
C
I
F
=160A; T
VJ
=125
o
C
0.1
Characteristic Values
typ.
max.
60
250
0.64
0.66
1.07
0.8
I
R
V
F
mA
V
R
thJC
R
thCH
K/W
FEATURES
APPLICATIONS
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* International standard package miniBLOC * Rectifiers in switch mode power
* Isolation voltage 2500 V~
supplies (SMPS)
* Free wheeling diode in low voltage
* 2 independent Schottky diodes in 1
converters
package
* Very low V
F
* Extremely low switching losses
* Low I
RM
-values
MBR2*80
Wide Temperature Range and High T
jm
Schottky Barrier Rectifiers
100
A
I
F
I
R
10000
mA
pF
1000
T
VJ
=150°C
125°C
10000
C
T
100
10
T
VJ
=
150°C
125°C
25°C
100°C
1000
10
75°C
1
50°C
25°C
T
VJ
= 25°C
1
0.0
0.1
0.2
0.4
0.6 V 0.8
V
F
0
10
20
30
40 V 50
V
R
100
0
10
20
30
V
R
40 V
Fig. 1 Maximum forward voltage
drop characteristics
120
A
100
I
F(AV)
80
60
40
Fig. 2 Typ. value of reverse current I
R
versus reverse voltage V
R
80
W
70
60
P
(AV)
50
40
d=
DC
0.5
0.33
0.25
0.17
0.08
Fig. 3 Typ. junction capacitance C
T
versus reverse voltage V
R
d=0.5
DC
30
20
20
0
0
40
80
T
C
120 °C 160
10
0
0
20
40
60
I
F(AV)
80 A
Fig. 4 Average forward current I
F(AV)
versus case temperature T
C
1
Fig. 5 Forward power loss
characteristics
K/W
Z
thJC
D=0.5
0.33
0.25
0.17
Single Pulse
0.08
0.1
0.05
0.001
DSS2x81-0045B
0.01
0.1
1s
10
t
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Note: All curves are per diode
Embedded System
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