MBR2530CT thru MBR2540CT
Wide Temperature Range and High T
jm
Schottky Barrier Rectifiers
A
C(TAB)
A
C
A
C
A
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
A=Anode, C=Cathode, TAB=Cathode
MBR2530CT
MBR2535CT
MBR2540CT
Symbol
I
(AV)
I
FSM
dv/dt
V
RRM
V
30
35
40
V
RMS
V
21
24.5
28
V
DC
V
30
35
40
Characteristics
Maximum Average Forward Rectified Current
@T
C
=130
o
C
Maximum Ratings
30
150
10000
I
F
=15A
I
F
=15A
I
F
=30A
I
F
=30A
@T
J
=25
o
C
@T
J
=125
o
C
@T
J
=25
o
C
@T
J
=125
o
C
@T
J
=25
o
C
@T
J
=125
o
C
-
-
0.82
0.73
0.2
40
1.5
450
-55 to +150
-55 to +175
Unit
A
A
V/us
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Voltage Rate Of Change (Rated V
R
)
Maximum Forward Voltage
(Per Leg) At (Note 1)
V
F
V
I
R
R
OJC
C
J
T
J
T
STG
Maximum DC Reverse Current
At Rated DC Blocking Voltage
Typical Thermal Resistance (Note 2)
mA
o
C/W
pF
o
o
Typical Junction Capacitance Per Element (Note 3)
Operating Temperature Range
Storage Temperature Range
C
C
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low V
F
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
MBR2530CT thru MBR2540CT
Wide Temperature Range and High T
jm
Schottky Barrier Rectifiers
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
40
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
50
25
0
1
2
5
10
20
50
100
30
20
10
RESISTIVE OR
INDUCTIVE LOAD
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
25
50
75
100
125
150
175
CASE TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
100.0
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS
REVERSE CURRENT ,(mA)
10.0
T
J
= 125 C
10
T
J
= 150 C
1.0
T
J
= 75 C
1.0
T
J
= 25 C
0.1
T
J
= 25 C
0.1
0.01
0.001
0
20
40
60
80
100
120
140
0.01
0
0.1
0.2
0.3
0.4
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
PULSE WIDTH 300us
2% Duty cycle
0.5
0.6
0.7
0.8
0.9
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
10000
CAPACITANCE , (pF)
1000
T
J
= 25 C, f= 1MHz
100
0.1
1
4
10
100
REVERSE VOLTAGE , VOLTS
ST MEMS Sensor Creative Design Competition
京公网安备 11010802033920号
EEWORLD
