PD - 95285
IRF7491PbF
HEXFET
®
Power MOSFET
Applications
l
High frequency DC-DC converters
l
Lead-Free
V
DSS
80V
16m
:
@V
GS
= 10V
R
DS(on)
max
I
D
9.7A
Benefits
l
Low Gate to Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
S
S
S
G
1
8
A
A
D
D
D
D
2
7
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 100°C
I
DM
P
D
@T
A
= 25°C
dv/dt
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
80
± 20
9.7
6.1
77
2.5
0.02
4.4
-55 to + 150
Units
V
h
A
W
W/°C
V/ns
°C
c
Maximum Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
e
Storage Temperature Range
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount) *
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 8
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1
09/16/04
IRF7491PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
80
–––
–––
3.5
–––
–––
–––
–––
–––
0.08
14
–––
–––
–––
–––
–––
–––
–––
16
5.5
1.0
250
100
-100
nA
V
mΩ
V
µA
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 5.8A
V
DS
= 64V, V
GS
= 0V
V
DS
= 64V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V/°C Reference to 25°C, I
D
= 1mA
f
V
DS
= V
GS
, I
D
= 250µA
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
9.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
51
18
18
22
19
32
10
2940
290
160
980
210
310
–––
76
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
S
I
D
= 5.8A
V
DS
= 40V
V
GS
= 10V
V
DD
= 40V
I
D
= 5.8A
R
G
= 6.2Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
Conditions
V
DS
= 25V, I
D
= 5.8A
f
f
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 64V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 64V
e
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Ã
dh
Typ.
–––
–––
Max.
130
5.8
Units
mJ
A
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
47
110
9.7
A
77
1.3
–––
–––
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ãh
p-n junction diode.
T
J
= 25°C, I
S
= 5.8A, V
GS
= 0V
T
J
= 25°C, I
F
= 5.8A, V
DD
= 25V
di/dt = 100A/µs
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF7491PbF
100
TOP
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
100
TOP
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
1
10
6.0V
0.1
6.0V
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
1000
1
0.1
1
20µs PULSE WIDTH
Tj = 150°C
10
100
1000
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100.00
2.5
T J = 150°C
10.00
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 9.7A
ID, Drain-to-Source Current
(Α
)
2.0
1.5
T J = 25°C
1.00
1.0
0.5
VDS = 25V
20µs PULSE WIDTH
0.10
5.0
6.0
7.0
8.0
9.0
10.0
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7491PbF
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
12.0
ID= 5.8A
VGS , Gate-to-Source Voltage (V)
10.0
10000
VDS= 64V
VDS= 40V
VDS= 16V
C, Capacitance(pF)
Ciss
1000
8.0
6.0
Crss
100
Coss
4.0
2.0
10
1
10
100
0.0
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100.00
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10.00
T J = 150°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100µsec
1.00
T J = 25°C
1msec
1
T A = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10
10msec
VGS = 0V
0.10
0.0
0.2
0.4
0.6
0.8
1.0
VSD, Source-toDrain Voltage (V)
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7491PbF
12
V
DS
V
GS
9
R
D
I
D
, Drain Current (A)
R
G
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
-
V
DD
6
3
Fig 10a.
Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
T Ambient Temperature (°C)
T
A
,
,
Case Temperature ( °C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
Fig 10b.
Switching Time Waveforms
100
Thermal Response (Z
thJA
)
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
100
0.1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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