Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
BAS28
High-speed double diode
Rev. 3 — 22 July 2010
Product data sheet
1. Product profile
1.1 General description
Two high-speed switching diodes fabricated in planar technology, and encapsulated in a
small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not
connected.
1.2 Features and benefits
High switching speed: t
rr
≤
4 ns
Reverse voltage: V
R
≤
75 V
Repetitive peak reverse voltage: V
RRM
≤
85 V
Repetitive peak forward current: I
FRM
≤
500 mA
AEC-Q101 qualified
Small SMD package
1.3 Applications
High-speed switching in e.g. surface-mounted circuits
1.4 Quick reference data
Table 1.
Symbol
Per diode
I
F
I
R
V
R
t
rr
[1]
[2]
Quick reference data
Parameter
forward current
reverse current
reverse voltage
reverse recovery time
[2]
Conditions
[1]
Min
-
-
-
-
Typ
-
-
-
-
Max
215
1
75
4
Unit
mA
μA
V
ns
V
R
= 75 V
Device mounted on an FR4 Printed-Circuit Board (PCB).
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
NXP Semiconductors
BAS28
High-speed double diode
2. Pinning information
Table 2.
Pin
1
2
3
4
Pinning
Description
cathode (diode 1)
cathode (diode 2)
anode (diode 2)
anode (diode 1)
1
2
1
2
006aab100
Simplified outline
4
3
Graphic symbol
4
3
3. Ordering information
Table 3.
Ordering information
Package
Name
BAS28
-
Description
plastic surface-mounted package; 4 leads
Version
SOT143B
Type number
4. Marking
Table 4.
BAS28
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
JT*
Type number
BAS28
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2010
2 of 12
NXP Semiconductors
BAS28
High-speed double diode
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
RRM
V
R
I
F
I
FRM
I
FSM
repetitive peak
reverse voltage
reverse voltage
forward current
repetitive peak
forward current
non-repetitive peak
forward current
square wave
t
p
= 1
μs
t
p
= 1 ms
t
p
= 1 s
Per device
P
tot
T
j
T
stg
[1]
[2]
[3]
[3]
[1]
Parameter
Conditions
Min
-
-
-
-
Max
85
75
215
500
Unit
V
V
mA
mA
-
-
-
[1][2]
4
1
0.5
250
150
+150
A
A
A
mW
°C
°C
total power dissipation
junction temperature
storage temperature
Device mounted on an FR4 PCB.
One diode loaded.
T
j
= 25
°C
prior to surge.
T
amb
= 25
°C
-
-
−65
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-t)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to tie-point
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
500
360
Unit
K/W
K/W
Per device; one diode loaded
Device mounted on an FR4 PCB.
BAS28
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2010
3 of 12
NXP Semiconductors
BAS28
High-speed double diode
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
F
forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
R
reverse current
V
R
= 25 V
V
R
= 75 V
V
R
= 25 V; T
j
= 150
°C
V
R
= 75 V; T
j
= 150
°C
C
d
t
rr
V
FR
[1]
[2]
Parameter
Conditions
Min
-
-
-
-
-
-
-
-
-
[1]
[2]
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
715
855
1
1.25
30
1
30
50
1.5
4
1.75
Unit
mV
mV
V
V
nA
μA
μA
μA
pF
ns
V
diode capacitance
reverse recovery time
forward recovery voltage
f = 1 MHz; V
R
= 0 V
-
-
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
When switched from I
F
= 10 mA; t
r
= 20 ns.
300
I
F
(mA)
(1)
(2)
(3)
mbg382
10
2
I
FSM
(A)
10
mbg704
200
100
1
0
10
−1
0
1
V
F
(V)
2
1
10
10
2
10
3
t
p
(μs)
10
4
(1) T
j
= 150
°C;
typical values
(2) T
j
= 25
°C;
typical values
(3) T
j
= 25
°C;
maximum values
Based on square wave currents.
T
j
= 25
°C;
prior to surge
Fig 1.
Forward current as a function of forward
voltage
Fig 2.
Non-repetitive peak forward current as a
function of pulse duration; maximum values
BAS28
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2010
4 of 12
京公网安备 11010802033920号
EEWORLD
