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BAS28...
Silicon Switching Diode
•
For high-speed switching applications
•
Electrical insulated diodes
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
BAS28/W
"
!
,
,
Type
BAS28
BAS28W
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Peak forward current
Package
SOT143
SOT343
Configuration
parallel pair
parallel pair
Symbol
V
R
V
RM
I
F
I
FM
I
FS
I
FSM
P
tot
330
250
T
j
T
stg
150
-55 ... 150
Value
80
85
200
-
4.5
-
Marking
JTs
JTs
Unit
V
mA
A
mW
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Surge forward current,
t
= 1 µs
Non-repetitive peak surge forward current
Total power dissipation
BAS28,
T
S
≤
31°C
BAS28W,
T
S
≤
103°C
Junction temperature
Storage temperature
1
Pb-containing
°C
package may be available upon special request
1
2007-04-19
BAS28...
Thermal Resistance
Parameter
Junction - soldering point
1)
BAS28
BAS28W
Symbol
R
thJS
Value
≤
360
≤
190
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
85
-
-
V
Breakdown voltage
V
(BR)
I
(BR)
= 100 µA
Reverse current
V
R
= 75 V
V
R
= 25 V,
T
A
= 150 °C
V
R
= 75 V,
T
A
= 150 °C
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 150 mA
V
F
-
-
-
-
-
-
-
-
-
-
715
855
1000
1200
1250
I
R
-
-
-
-
-
-
0.1
30
50
mV
µA
AC Characteristics
Diode capacitance
V
R
= 0 V,
f
= 1 MHz
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA, measured at
I
R
= 1mA ,
R
L
= 100
Ω
Test circuit for reverse recovery time
D.U.T.
C
T
t
rr
-
-
-
-
2
4
pF
ns
Pulse generator:
t
p
= 100ns,
D
= 0.05,
t
r
= 0.6ns,
R
i
= 50Ω
Oscillograph
Ι
F
EHN00019
Oscillograph:
R
= 50Ω,
t
r
= 0.35ns,
C
≤
1pF
1
For
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
2007-04-19
Embedded System
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