VP2020L18 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> VP2020L18

VP2020L18: Description120mA, 200V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA; CategoryDiscrete semiconductor The transistor; File Size41KB，2 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

Download Datasheet Parametric Compare View All

VP2020L18 Overview

120mA, 200V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA

VP2020L18 Parametric

Parameter Name	Attribute value
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	0.12 A
Maximum drain-source on-resistance	20 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	10 pF
JEDEC-95 code	TO-226AA
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Transistor component materials	SILICON
Base Number Matches	1

Preview

Download Datasheet

View All

VP2020L18 Related Products

	VP2020L18	VP2020L18-1	VP2020L18-2	VP2020L-1TR1	VP2020L-2TA	VP2020LTR1	VP2020L-2TR1	VP2020L-1TA
Description	120mA, 200V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA	Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA	Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA	Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA	Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA	Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA	Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA	Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	200 V	200 V	200 V	200 V	200 V	200 V	200 V
Maximum drain current (ID)	0.12 A	0.12 A	0.12 A	0.12 A	0.12 A	0.12 A	0.12 A	0.12 A
Maximum drain-source on-resistance	20 Ω	20 Ω	20 Ω	20 Ω	20 Ω	20 Ω	20 Ω	20 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	10 pF	10 pF	10 pF	10 pF	10 pF	10 pF	10 pF	10 pF
JEDEC-95 code	TO-226AA	TO-226AA	TO-226AA	TO-226AA	TO-226AA	TO-226AA	TO-226AA	TO-226AA
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1	-	-	-
ECCN code	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99

Recommended Resources

Dual adjustable power circuit

Circuit to avoid singeing of thermometer contacts a

LB1405, 15-level display circuit (a) amplification part

Automatic water inlet control circuit

Circuit diagram to suppress capacitor discharge

Half-bridge wiring diagram of SCALE driver

Credit Suisse report: Russia's wealth gap is the largest in the world, and Chinese family wealth continues to grow: On the 9th, the Swiss-based Credit Suisse Research Institute released its fourth annual Global Wealth Report. The report said that since 2000, China's per capita wealth has almost quadrupled, from $5,...; walkwk Talking

Do I need to solder the capacitor next to the external 32768 crystal oscillator of MSP-EXP430G2?: When I was learning about the MSP-EXP430G2 board, TI gave me a 32768 crystal oscillator. I wanted to solder it on, but I saw that there were positions for two 12pf capacitors on the circuit, but TI di...; lkl0305 Microcontroller MCU

Why is the triangle wave sampled by my AD like this? It doesn't specify what the unit of the vertical axis is.: Why is the triangle wave sampled by my AD like this? It doesn't specify what the unit of the vertical axis is....; 双子charming1 DSP and ARM Processors

Key points of transformer design: Key points of transformer design (1) Both the pulse source and the load are field effect tubes, and their input capacitance is relatively large. Usually, the magnetic reset is accelerated by reducing ...; zbz0529 Power technology

PCB LAYOUT Technology Encyclopedia: 1. Common errors in schematics: (1) ERC reports that the pin is not connected to the signal: a. The I/O attribute is defined for the pin when creating the package; b. The inconsistent grid attribute i...; kandy2059 PCB Design

FPGA controls DSP power-on reset procedure: module DSP_RST(input clk_25m,input RESETSTAT, //DSP reset status 0 means reset status 1 means working statusinput LOCKED, //Is the clock module normal?output ref LRESETNMIENz = 1'b0,//局部复位管脚output reg...; Jacktang DSP and ARM Processors

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components