DATA SHEET
COMPOUND TRANSISTOR
AN1F4Z
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
FEATURES
• On-chip bias resistor
(R
1
= 22 kΩ)
• Complementary transistor with AA1A4Z
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
P
T
T
j
T
stg
Ratings
−60
−50
−5
−100
−200
250
150
−55
to +150
Unit
V
V
V
mA
mA
mW
°C
°C
* PW
≤
10 ms, duty cycle
≤
50 %
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
Collector saturation voltage
Low level input voltage
High level input voltage
Input resistance
Turn-on time
Storage time
Turn-off time
Symbol
I
CBO
h
FE1
**
h
FE2
**
V
CE(sat)
**
V
IL
**
V
IH
**
R
1
t
on
t
stg
t
off
V
CC
=
−5.0
V, R
L
= 1.0 kΩ
V
I
=
−5.0
V, PW = 2.0
µ
s
duty cycle≤2 %
Conditions
V
CB
=
−50
V, I
E
= 0
V
CE
=
−5.0
V, I
C
=
−5.0
mA
V
CE
=
−5.0
V, I
C
=
−50
mA
I
C
=
−5.0
mA, I
B
=
−0.25
mA
V
CE
=
−5.0
V, I
C
=
−100
µ
A
V
CE
=
−0.2
V, I
C
=
−5.0
mA
−3.0
15.4
135
100
280
200
−0.06
−0.57
−1.1
22
28.6
0.2
5.0
6.0
−0.2
−0.5
MIN.
TYP.
MAX.
−100
600
Unit
nA
−
−
V
V
V
kΩ
µ
s
µ
s
µ
s
** Pulse test PW
≤
350
µ
s, duty cycle
≤
2 %
h
FE
CLASSIFICATION
Marking
h
FE1
Q
135 to 270
P
200 to 400
K
300 to 600
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16167EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
AN1F4Z
•
The information in this document is current as of July, 2001. The information is subject to change
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books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
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•
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third parties by or arising from the use of NEC semiconductor products listed in this document or any other
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patents, copyrights or other intellectual property rights of NEC or others.
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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parties arising from the use of these circuits, software and information.
•
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•
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