CJD350TR datasheet, PDF - EEWORLD Datasheet

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CJD350TR: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size419KB，2 Pages; ManufacturerCentral Semiconductor

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CJD350TR Overview

Transistor

CJD350TR Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	unknown
Maximum collector current (IC)	0.5 A
Configuration	Single
Minimum DC current gain (hFE)	30
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	15 W
surface mount	YES
Base Number Matches	1

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CJD340 NPN

CJD350 PNP

SURFACE MOUNT

COMPLEMENTARY SILICON

POWER TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CJD340, CJD350

types are Complementary Silicon Power Transistors

manufactured in a surface mount package designed for

high voltage general purpose applications.

MARKING: FULL PART NUMBER

DPAK TRANSISTOR CASE

MAXIMUM RATINGS:

(TC=25°C unless otherwise noted)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Power Dissipation

Power Dissipation (TA=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

ICM

TJ, Tstg

300

3.0

500

750

1.56

-65 to +150

8.33

80.1

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

IEBO

BVCEO

hFE

VCE=300V

VEB=3.0V

IC=1.0mA

VCE=10V, IC=50mA

300

MAX

100

240

UNITS

µA

R2 (4-January 2010)

CJD350TR Related Products

	CJD350TR	CJD340TR
Description	Transistor	Transistor
Is it Rohs certified?	incompatible	incompatible
Reach Compliance Code	unknown	unknown
Maximum collector current (IC)	0.5 A	0.5 A
Configuration	Single	Single
Minimum DC current gain (hFE)	30	30
Maximum operating temperature	150 °C	150 °C
Polarity/channel type	PNP	NPN
Maximum power dissipation(Abs)	15 W	15 W
surface mount	YES	YES
Base Number Matches	1	1

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