RT1N15BX SERIES
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
DESCRIPTION
RT1N15BX is a one chip transistor
with built-in bias resistor,PNP type is RT1P15BX.
RT1N15BU
1.6
OUTLINE
DRAWING
RT1N15BC
2.5
UNIT:mm
FEATURE
・Built-in bias resistor (R2=100kΩ).
0.5
0.4
0.8
0.4
0.5
1.5
0.5
0.3
①
②
③
0.95
①
②
③
2.9
1.90
1.6
1.0
APPLICATION
Inverted circuit,switching circuit,interface circuit,
driver circuit.
0.7
0.15
1.1
0.55
0.8
0.16
0½0.1
C
(OUT)
B
(IN)
JEITA:-
JEDEC:-
Terminal Connector
①:Base
②:Emitter
③:Collector
RT1N15BM
2.1
0.425
1.25
0.425
JEITA:SC-59
JEDEC:Similar to TO-236
Terminal Connector
①:Base
②:Emitter
③:Collector
RT1N15BS
4.0
R2
E
(GND)
0.65
0.3
3.0
0½0.1
Equivalent circuit
0.95
0.5
①
②
③
2.0
1.3
14.0
1.0
1.0
0.1
0.45
0.65
1.27 1.27
0.9
0.15
0.4
2.5
①
②
③
0.7
JEITA:SC-70
JEDEC:-
Terminal Connector
①:Base
②:Emitter
③:Collector
0½0.1
JEITA:-
JEDEC:-
Terminal Connector
①:Emitter
②:Collector
③:Base
ISAHAYA ELECTRONICS CORPORATION
0.4
RT1N15BX SERIES
MAXIMUM RATING (Ta=25℃)
SYMBOL
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
C
T½
T½½½
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RT1N15BU
RATING
RT1N15BM
RT1N15BC
50
6
50
100
200
200
+150
-55½+150
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
RT1N15BS
UNIT
V
V
V
mA
mA
mW
℃
℃
LIMIT
TYP
150
+150
-55½+150
450
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
V
(BR)CEO
I
CBO
½
FE
V
CE(½½½)
R
2
½
T
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Emitter-base resistance
Gain band width product
TEST CONDITION
I
C
=100μA,R
BE
=∞
V
CB
=50V,I
E
=0
V
CE
=5V,I
C
=5mA
I
C
=10mA,I
B
=0.5mA
V
CE
=6V,I
E
MIN
50
82
MAX
0.1
0.3
UNIT
V
μA
-
V
kΩ
MHz
=-10mA
100
200
Input on voltage -Collector current
10
1000
DC forward current gain-Collector current
DC forward current gain hFE
Input on voltage VI(ON)(V)
VCE=0.2V
VCE=5V
100
1
10
0.1
0.1
1
10
100
Collector current IC(mA)
1
0.1
1
10
100
Collector current IC(mA)
Collector current -Input off voltage
100
Collector current IC(mA)
VCE=5V
10
1
0.1
0.1
1
Input on voltage VI(OFF)(V)
10
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·
ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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h
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Jan.2003