Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
NXP Semiconductors
Product data sheet
NPN medium frequency transistor
FEATURES
•
I
C(max)
= 25 mA
•
V
CEO(max)
= 20 V.
APPLICATIONS
•
Medium frequency applications in thick and thin-film
circuits.
DESCRIPTION
NPN medium frequency transistor in a SOT23 plastic
package.
MARKING
TYPE NUMBER
BFS19
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
TYPE
NUMBER
BFS19
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
MARKING CODE
(1)
F2*
Top view
MAM255
BFS19
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
3
1
2
1
2
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
2004 Jan 05
2
NXP Semiconductors
Product data sheet
NPN medium frequency transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
30
20
5
30
30
250
+150
150
+150
BFS19
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
2004 Jan 05
3
NXP Semiconductors
Product data sheet
NPN medium frequency transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
V
BE
C
c
C
re
f
T
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
base-emitter voltage
collector capacitance
feedback capacitance
transition frequency
CONDITIONS
I
E
= 0; V
CB
= 20 V
I
E
= 0; V
CB
= 20 V; T
j
= 100
°C
I
C
= 0; V
EB
= 5 V
I
C
= 1 mA; V
CE
= 10 V
I
C
= 1 mA; V
CE
= 10 V
I
E
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 0 mA; V
CB
= 10 V; f = 1 MHz
I
C
= 1 mA; V
CE
= 10 V; f = 100 MHz
MIN.
−
−
−
65
650
−
−
−
TYP.
−
−
−
−
−
1
0.85
260
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
BFS19
UNIT
K/W
MAX.
100
10
100
225
740
−
−
−
UNIT
nA
µA
nA
mV
pF
pF
MHz
2004 Jan 05
4
RF/Wirelessly
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