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BSP297L6327

Description
Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
CategoryDiscrete semiconductor    The transistor   
File Size652KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
Download Datasheet Parametric View All

BSP297L6327 Overview

Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

BSP297L6327 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)0.66 A
Maximum drain current (ID)0.66 A
Maximum drain-source on-resistance1.8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.8 W
Maximum pulsed drain current (IDM)2.64 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Base Number Matches1
Rev.
2.1
BSP297
SIPMOS
Ò
Small-Signal-Transistor
Feature
·
N-Channel
·
Enhancement mode
·
Logic Level
·
dv/dt rated
Product Summary
V
DS
R
DS(on)
I
D
200
1.8
0.66
PG-SOT223
4
V
W
A
Pb-free lead plating; RoHS compliant
Qualified according to AEC Q101
3
2
1
VPS05163
Type
BSP297
Pb-free
Yes
Package
PG-SOT223
Tape and Reel Information
L6327:
1000
pcs/reel
Marking
BSP297
Packaging
Non dry
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Symbol
Parameter
Continuous drain current
T
A
=25°C
T
A
=70°C
Value
0.66
0.53
Unit
A
I
D
Pulsed drain current
T
A
=25°C
I
D puls
dv/dt
V
GS
P
tot
T
j ,
T
stg
2.64
6
±20
1B
(>500V, <1000V)
1.8
-55... +150
55/150/56
W
°C
kV/µs
V
Reverse diode dv/dt
I
S
=0.66A,
V
DS
=160V, di/dt=200A/µs,
T
jmax
=150°C
Gate source voltage
ESD
(JESD22-A114-HBM)
Power dissipation
T
A
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Page
1
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