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BC848CR

Description
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size340KB,2 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

BC848CR Overview

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

BC848CR Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)420
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
BC846 SERIES
BC847 SERIES
BC848 SERIES
SURFACE MOUNT
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC846, BC847
and BC848 Series types are NPN Silicon Transistors
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for
general purpose switching and amplifier applications.
MARKING CODE: SEE MARKING CODE TABLE
ON FOLLOWING PAGE
SOT-23 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICBO
IEBO
BVCBO
BVCBO
BVCBO
BVCEO
BVCEO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(ON)
VBE(ON)
fT
NF
Note: Reverse Lead Codes Available, Add “R” to
the end of the Part # and Marking Code.
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
PD
TJ, Tstg
Θ
JA
BC848
30
30
BC847
50
45
5.0
100
200
200
350
-65 to +150
357
BC846
80
65
UNITS
V
V
V
mA
mA
mA
mW
°C
°C/W
CHARACTERISTICS:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VCB=30V
VCB=30V, TA=150°C
VEB=5.0V
IC=10μA (BC848)
30
IC=10μA (BC847)
50
IC=10μA (BC846)
80
IC=10mA (BC848)
30
IC=10mA (BC847)
45
IC=10mA (BC846)
65
IE=10μA
5.0
IC=10mA, IB=0.5mA
IC=100mA, IB=5.0mA
IC=2.0mA, VCE=5.0V
0.58
IC=10mA, VCE=5.0V
VCE=5.0V, IC=10mA, f=100MHz
100
VCE=5.0V, IC=200μA,
RS=2.0KΩ, f=1.0KHz, BW=200Hz
BC846A
BC847A
BC848A
MIN MAX
110 220
MAX
15
5.0
100
0.25
0.60
0.70
0.77
UNITS
nA
μA
nA
V
V
V
V
V
V
V
V
V
V
V
MHz
dB
10
BC846B
BC847B
BC848B
MIN MAX
200
450
hFE
VCE=5.0V, IC=2.0mA
BC847C
BC848C
MIN
MAX
420
800
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