MIC4123/4/5
Dual 3A Peak Low-Side MOSFET Drivers
Features
• Reliable, Low-Power Bipolar/CMOS/DMOS
Construction
• Latch-Up Protected to >200 mA Reverse Current
• Logic Input Withstands Swing to –5V
• High 3A Peak Output Current
• Wide 4.5V to 20V Operating Range
• Drives 1800 pF Capacitance in 25 ns
• Short <50 ns Typical Delay Time
• Delay Times Consistent within Supply Voltage
Change
• Matched Rise and Fall Times
• TTL Logic Input Independent of Supply Voltage
• Low Equivalent 6 pF Input Capacitance
• Low Supply Current
- 3.5 mA with Logic-1 Input
- 350
μA
with Logic-0 Input
• Low 2.3Ω Typical Output Impedance
• Output Voltage Swings within 25 mV of
Ground or V
S
• ‘426/7/8-, ‘1426/7/8-, ‘4426/7/8-Compatible Pinout
• Inverting, Non-Inverting, and Differential
Configurations
• Exposed Backside Pad Packaging Reduces Heat
- ePad SOIC-8L (θ
JA
= 58°C/W)
- 4 mm x 4 mm VDFN-8L (θ
JA
= 45°C/W)
General Description
The MIC4123/4124/4125 family are highly reliable
BiCMOS/DMOS buffer/driver/MOSFET drivers. They
are higher output current versions of the
MIC4126/4127/4128, which are improved versions of
the MIC4426/4427/4428. All three families are
pin-compatible. The MIC4123/4/5 drivers are capable
of providing reliable service in more demanding
electrical environments than their predecessors. They
will not latch under any conditions within their power
and voltage ratings. They can survive up to 5V of noise
spiking, of either polarity, on the ground pin. They can
accept, without either damage or logic upset, up to half
an amp of reverse current (either polarity) forced back
into their outputs.
The MIC4123/4/5 series drivers are easier to use, more
flexible in operation, and more forgiving than other
CMOS or bipolar drivers currently available. Their
BiCMOS/DMOS construction dissipates minimum
power and provides rail-to-rail voltage swings.
Primarily intended for driving power MOSFETs, the
MIC4123/4/5 drivers are suitable for driving other loads
(capacitive, resistive, or inductive) that require
low-impedance, high peak currents, and fast switching
times. Heavily loaded clock lines, coaxial cables, or
piezoelectric transducers are some examples. The
only known limitation on loading is that total power
dissipated in the driver must be kept within the
maximum power dissipation limits of the package.
Package Types
MIC4123
ePad SOIC-8 (ME)
VDFN-8 (ML)
(Top View)
MIC4123
NC 1
INA 2
GND 3
INB 4
8 NC
7 OUTA
6 V
S
5 OUTB
4
B
5
2
A
7
MIC4124
ePad SOIC-8 (ME)
VDFN-8 (ML)
(Top View)
MIC4124
NC 1
INA 2
GND 3
INB 4
8 NC
7 OUTA
6 V
S
5 OUTB
4
B
5
2
A
7
MIC4125
ePad SOIC-8 (ME)
VDFN-8 (ML)
(Top View)
MIC4125
NC 1
INA 2
GND 3
INB 4
8 NC
7 OUTA
6 V
S
5 OUTB
4
B
5
2
A
7
MIC4123
MIC4124
MIC4125
Dual
Inverting
Dual
Noninverting
Inverting +
Noninverting
2018 Microchip Technology Inc.
DS20006035A-page 1
MIC4123/4/5
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage ..........................................................................................................................................................+24V
Input Voltage ................................................................................................................................ V
S
+ 0.3V to GND – 5V
ESD Susceptibility................................................................................................................................................ (Note
1)
Operating Ratings ††
Supply Voltage (V
S
) ................................................................................................................................... +4.5V to +20V
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
†† Notice:
The device is not guaranteed to function outside its operating ratings.
Note 1:
Devices are ESD sensitive. Handling precautions are recommended. Human body model, 1.5 kΩ in series
with 100 pF.
ELECTRICAL CHARACTERISTICS
Electrical Characteristics:
4.5V
≤
V
S
≤
20V; T
A
= +25°C,
bold
values indicate –40°C
≤
T
J
≤
+125°C; unless noted.
Input voltage slew rate >2.5 V/μs.
Note 1
Parameter
Input
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance High
State
Output Resistance Low
State
Peak Output Current
Latch-Up Protection
Withstand Reverse
Current
Switching Time
Rise Time
Fall Time
Note 1:
t
r
t
f
—
—
—
—
11
—
11
—
35
60
35
60
ns
ns
Test
Figure 1-1,
C
L
= 1800 pF
—
Test
Figure 1-1,
C
L
= 1800 pF
—
R
O
V
OH
V
OL
V
S
–
0.025
—
—
—
—
—
I
PK
I
—
>200
—
—
2.3
—
2.2
—
3
—
—
0.025
5
8
5
8
—
—
A
mA
Ω
V
V
I
OUT
= 100 µA
I
OUT
= –100 µA
I
OUT
= 10 mA, V
S
= 20V
—
I
OUT
= 10 mA, V
S
= 20V
—
—
—
V
IH
V
IL
I
IN
2.4
—
–1
–10
1.5
1.3
—
—
—
0.8
1
10
V
V
µA
—
—
0V
≤
V
IN
≤
V
S
—
Sym.
Min.
Typ.
Max.
Units
Conditions
Specification for packaged product only.
2018 Microchip Technology Inc.
DS20006035A-page 3
MIC4123/4/5
TEMPERATURE SPECIFICATIONS
Parameters
Temperature Ranges
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature
Junction Operating Temperature
Range
Package Thermal Resistances
Thermal Resistance, 4x4 VDFN 8-Ld
Thermal Resistance, EP SOIC-8
Note 1:
JA
JA
—
—
45
58
—
—
°C/W
°C/W
—
—
T
J
T
S
—
T
J
—
–65
—
–40
—
—
—
—
+150
+150
+300
+125
°C
°C
°C
°C
—
—
10 sec.
—
Sym.
Min.
Typ.
Max.
Units
Conditions
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
,
JA
). Exceeding the
maximum allowable power dissipation will cause the device operating junction temperature to exceed the
maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability.
2018 Microchip Technology Inc.
DS20006035A-page 5
Power technology
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