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MWT-22Q4

Description
TRANSISTOR S BAND, GaAs, N-CHANNEL, RF POWER, MESFET, 4 X 4 MM, QFN-16, FET RF Power
CategoryDiscrete semiconductor    The transistor   
File Size169KB,6 Pages
ManufacturerMicrowave Technology Inc.
Download Datasheet Parametric Compare View All

MWT-22Q4 Overview

TRANSISTOR S BAND, GaAs, N-CHANNEL, RF POWER, MESFET, 4 X 4 MM, QFN-16, FET RF Power

MWT-22Q4 Parametric

Parameter NameAttribute value
Parts packaging codeQFN
package instructionCHIP CARRIER, S-XQCC-N16
Contacts16
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage9 V
Maximum drain current (ID)0.8 A
FET technologyMETAL SEMICONDUCTOR
highest frequency bandS BAND
JESD-30 codeS-XQCC-N16
Number of components1
Number of terminals16
Operating modeDEPLETION MODE
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formCHIP CARRIER
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationQUAD
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE
Base Number Matches1
MwT-22Q4
High Power, High Linearity Packaged FET
Features
Ideal for DC-4000 MHz High Power / High Linearity Applications
Excellent RF Performance:
o
33 dBm P1dB
o
47 dBm IP3
o
16 dB SSG @ 2000 MHz
o
40% PAE
MTTF > 100 years @ Channel Temperature 150°C
QFN 4x4 mm Surface Mount Package
Description
The MwT-22Q4 is a high linearity GaAs MESFET device in low cost QFN package that is ideally suited for high power / high linearity
applications. The applications include 2G, 2.5G, and 3G wireless infrastructure standards, such as GSM, TDMA, cdma, Edge,
cdma2000, WCDMA, TD-SCDMA, and UMTS base stations. This product is also ideal for high data rate wireless LAN infrastructure
applications, such as high QAM rate 802.11 WiFi and 802.16 WiMax base stations and APs (Access Points). In addition, the product
can be used for point-to-point microwave communications links. The third order intercept performance of the MwT-22Q4 is excellent,
typically 14 dB above the 1 dB power gain compression point. The chip is produced using MwT's proprietary high linearity device
design and process with reliable metal system. All chips are passivated using MwT's patented "Diamond-Like Carbon" process for
increased durability.
RF Specifications
SYMBOL
SSG
P1dB
OIP3
PAE
(1)
Vds=7.5V, Ids=560mA, Ta= 25
°C
(1)
FREQ
4 GHz
4 GHz
4 GHz
4 GHz
UNITS
dB
dBm
dBm
%
MIN
12.0
32.0
TYP
13.5
33.0
47
40
PARAMETERS & CONDITIONS
Small Signal Gain
Output Power at 1dB Compression
Output IP3
Power Added Efficiency at P1dB
(1)
RF measurement is taken in a test fixture with tuners at input and output.
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006

MWT-22Q4 Related Products

MWT-22Q4
Description TRANSISTOR S BAND, GaAs, N-CHANNEL, RF POWER, MESFET, 4 X 4 MM, QFN-16, FET RF Power
Parts packaging code QFN
package instruction CHIP CARRIER, S-XQCC-N16
Contacts 16
Reach Compliance Code unknown
ECCN code EAR99
Shell connection SOURCE
Configuration SINGLE
Minimum drain-source breakdown voltage 9 V
Maximum drain current (ID) 0.8 A
FET technology METAL SEMICONDUCTOR
highest frequency band S BAND
JESD-30 code S-XQCC-N16
Number of components 1
Number of terminals 16
Operating mode DEPLETION MODE
Package body material UNSPECIFIED
Package shape SQUARE
Package form CHIP CARRIER
Polarity/channel type N-CHANNEL
Certification status Not Qualified
surface mount YES
Terminal form NO LEAD
Terminal location QUAD
transistor applications AMPLIFIER
Transistor component materials GALLIUM ARSENIDE
Base Number Matches 1
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