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MT16HTF25664HY-53EXX

Description
DDR DRAM Module, 256MX64, 0.5ns, CMOS, LEAD FREE, MO-224, SODIMM-200
Categorystorage    storage   
File Size340KB,15 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

MT16HTF25664HY-53EXX Overview

DDR DRAM Module, 256MX64, 0.5ns, CMOS, LEAD FREE, MO-224, SODIMM-200

MT16HTF25664HY-53EXX Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeSODIMM
package instructionDIMM,
Contacts200
Reach Compliance Codeunknown
ECCN codeEAR99
access modeDUAL BANK PAGE BURST
Maximum access time0.5 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XZMA-N200
JESD-609 codee4
length67.6 mm
memory density17179869184 bit
Memory IC TypeDDR DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals200
word count268435456 words
character code256000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256MX64
Package body materialUNSPECIFIED
encapsulated codeDIMM
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height30.15 mm
self refreshYES
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceGold (Au)
Terminal formNO LEAD
Terminal locationZIG-ZAG
Maximum time at peak reflow temperature30
Base Number Matches1
1GB, 2GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
Features
DDR2 SDRAM SODIMM
MT16HTF12864HY – 1GB
MT16HTF25664HY – 2GB
Features
200-pin, small-outline dual in-line memory module
(SODIMM)
Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
1GB (128 Meg x 64) or 2GB (256 Meg x 64)
V
DD
= V
DDQ
1.8V
V
DDSPD
= 1.7–3.6V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Multiple internal device banks for concurrent opera-
tion
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency - 1
t
CK
Programmable burst lengths (BL): 4 or 8
Adjustable data-output drive strength
64ms, 8192-cycle refresh
On-die termination (ODT)
Serial presence detect (SPD) with EEPROM
Gold edge contacts
Dual rank
Figure 1: 200-Pin SODIMM (MO-224 R/C E)
Module height: 30mm (1.18in)
Options
Operating temperature
Commercial (0°C
T
A
+70°C)
Industrial (–40°C
T
A
+85°C)
1
Package
200-pin DIMM (lead-free)
Frequency/CL
2
2.5ns @ CL = 5 (DDR2-800)
2.5ns @ CL = 6 (DDR2-800)
3ns @ CL = 5 (DDR2-667)
3.75ns @ CL = 4 (DDR2-533)
5.0ns @ CL = 3 (DDR2-400)
3
Notes:
Marking
None
I
Y
-80E
-800
-667
-53E
-40E
1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency.
3. Not recommended for new designs.
Table 1: Key Timing Parameters
Speed
Grade
-80E
-800
-667
-53E
-40E
Industry
Nomenclature
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
Data Rate (MT/s)
CL = 6
800
800
CL = 5
800
667
667
CL = 4
533
533
553
553
400
CL = 3
400
400
400
400
400
t
RCD
t
RP
t
RC
(ns)
12.5
15
15
15
15
(ns)
12.5
15
15
15
15
(ns)
55
55
55
55
55
PDF: 09005aef818e4054
htf16c128_256x64h.pdf - Rev. D 3/10 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2004 Micron Technology, Inc. All rights reserved.
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