STGB8NC60K - STGD8NC60K
STGP8NC60K
N-channel 600V - 8A - D
2
PAK / DPAK / TO-220
Short circuit rated PowerMESH™ IGBT
Features
Type
STGB8NC60K
STGD8NC60K
STGP8NC60K
■
■
■
■
V
CES
600V
600V
600V
V
CE(sat)
Typ
@25°C
2.2V
2.2V
2.2V
I
C
@100°C
8A
8A
8A
3
1
2
TO-220
Lower on voltage drop (V
cesat
)
Lower C
RES
/ C
IES
ratio (no cross-conduction
susceptibility)
Very soft ultra fast recovery antiparallel diode
Short circuit withstand time 10µs
Applications
■
■
■
High frequency motor controls
SMPS and PFC in both hard switch and
resonant topologies
Motor drivers
Description
bs
O
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “K” identifies a family
optimized for high frequency motor control
applications with short circuit withstand capability.
Table 1.
Device summary
Marking
GB8NC60K
GD8NC60K
GP8NC60K
Package
D²PAK
DPAK
TO-220
Packaging
Tape & reel
Tape & reel
Tube
et
l
o
ro
P
e
uc
d
s)
t(
O
-
Figure 1.
so
b
te
le
ro
P
uc
d
3
DPAK
s)
t(
3
1
1
D
²
PAK
Internal schematic diagram
Order codes
STGB8NC60K
STGD8NC60K
STGP8NC60K
October 2007
Rev 1
1/17
www.st.com
17
Contents
STGB8NC60K - STGD8NC60K - STGP8NC60K
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
4
5
6
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
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-
so
b
te
le
ro
P
uc
d
s)
t(
2/17
STGB8NC60K - STGD8NC60K - STGP8NC60K
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
V
CES
I
C(1)
I
C(1)
I
CP(2)
V
GE
P
TOT
T
j
T
scw
Absolute maximum ratings
Value
Parameter
D²PAK/TO-220
Collector-emitter voltage (V
GS
= 0)
Collector current (continuous) at T
C
= 25°C
Collector current (continuous) at T
C
= 100°C
Pulsed collector current
Gate-emitter voltage
Total dissipation at T
C
= 25°C
Operating junction temperature
Short circuit withstand time
65
600
15
8
30
±20
DPAK
V
A
Unit
1. Calculated according to the iterative formula:
T
–
T
JMAX
C
I
(
T
)
= -----------------------------------------------------------------------------------------------------
-
C C
R
×
V
(
T
,
I
)
THJ
–
C
CESAT
(
MAX
)
C C
2. Pulse width limited by max junction temperature
Table 3.
Symbol
Rthj-case
Thermal resistance
bs
O
et
l
o
Rthj-amb
ro
P
e
Thermal resistance junction-case max
DPAK
2.0
62.5
°C/W
°C/W
uc
d
s)
t(
O
-
so
b
te
le
ro
P
10
uc
d
62
s)
t(
A
A
V
W
°C
µs
– 55 to 150
Parameter
TO-220 / D²PAK
Value
1.9
Unit
°C/W
Thermal resistance junction-ambient Max
3/17
Electrical characteristics
STGB8NC60K - STGD8NC60K - STGP8NC60K
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
V
BR(CES)
V
CE(sat)
V
GE(th)
I
CES
I
GES
g
fs
Static
Parameter
Collector-emitter
breakdown voltage
Test conditions
I
C
= 1mA, V
GE
= 0
Min.
600
2.2
1.8
4.5
2.75
Typ.
Max.
Unit
V
V
V
V
Collector-emitter saturation V
GE
= 15V, I
C
=3A
voltage
V
GE
= 15V, I
C
= 3A, Tc= 125°C
Gate threshold voltage
Collector cut-off current
(V
GE
= 0)
Gate-emitter leakage
current (V
CE
= 0)
Forward transconductance
V
CE
= V
GE
, I
C
= 250 µA
V
CE
= Max rating,T
C
= 25°C
V
CE
=Max rating,T
C
= 125°C
V
GE
= ±20V, V
CE
= 0
V
CE
= 15V
,
I
C
= 3A
Table 5.
Symbol
C
ies
C
oes
C
res
Q
g
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
bs
O
et
l
o
ro
P
e
Q
ge
Q
gc
Total gate charge
Gate-emitter charge
Gate-collector charge
uc
d
s)
t(
O
-
Test conditions
so
b
te
le
r
P
d
o
uc
6.5
150
1
s)
t(
µA
mA
nA
S
±100
15
Min.
Typ. Max.
380
46
8.5
19
5
9
Unit
pF
pF
pF
nC
nC
nC
V
CE
= 25V, f = 1MHz,
V
GE
= 0
V
CE
= 390V, I
C
= 3A,
V
GE
= 15V,
(see Figure 18)
4/17
STGB8NC60K - STGD8NC60K - STGP8NC60K
Electrical characteristics
Table 6.
Symbol
t
d(on)
t
r
(di/dt)
on
t
d(on)
t
r
(di/dt)
on
t
r
(V
off
)
t
d
(
off
)
t
f
t
r
(V
off
)
t
d
(
off
)
t
f
Switching on/off (inductive load)
Parameter
Turn-on delay time
Current rise time
Turn-on current slope
Test conditions
V
CC
= 390V, I
C
= 3A
,
R
G
= 10Ω V
GE
= 15V,
Tj= 25°C
(see Figure 19)
V
CC
= 390V, I
C
=3A
R
G
= 10Ω V
GE
= 15V,
,
Tj=125°C
(see Figure 19)
V
cc
= 390V, I
C
= 3A,
R
GE
= 10Ω V
GE
=15V,
,
T
J
=25°C
(see Figure 19)
V
cc
= 390V, I
C
= 3A,
,
R
GE
=10Ω V
GE
=15V,
Tj=125°C
(see Figure 19)
Min.
Typ.
17
6
655
Max.
Unit
ns
ns
A/µs
Turn-on delay time
Current rise time
Turn-on current slope
16.5
6.5
575
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Table 7.
Symbol
E
on(1)
E
off(2)
E
ts
Switching energy (inductive load)
Parameter
E
on(1)
b
O
et
l
so
E
off(2)
E
ts
od
r
P
e
Turn-on switching losses
Turn-off switching losses
Total switching losses
uc
s)
t(
O
-
so
b
te
le
ro
P
Min.
uc
d
60
106
136
33
72
82
s)
t(
ns
ns
A/µs
ns
ns
ns
ns
ns
ns
Test conditions
Typ.
55
85
140
87
162
249
Max.
Unit
µJ
µJ
µJ
µJ
µJ
µJ
V
CC
= 390V, I
C
= 3A
,
R
G
= 10Ω V
GE
=15V, Tj=25°C
(see Figure 19)
V
CC
= 390V, I
C
= 3A
,
R
G
= 10Ω V
GE
= 15V,
Tj= 125°C
(see Figure 19)
Turn-on switching losses
Turn-off switching losses
Total switching losses
1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
5/17
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