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STTH806

Description
8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
Categorysemiconductor    Discrete semiconductor   
File Size119KB,9 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

STTH806 Overview

8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC

STTH806 Parametric

Parameter NameAttribute value
Number of components1
Number of terminals2
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-2
each_compliYes
EU RoHS regulationsYes
stateActive
Diode typeRECTIFIER DIODE
applicationHIGH VOLTAGE ULTRA FAST RECOVERY
structureSINGLE
Diode component materialsSILICON
Maximum forward voltage1.4 V
jedec_95_codeTO-220AC
jesd_30_codeR-PSFM-T2
moisture_sensitivity_levelNOT SPECIFIED
Maximum non-repetitive peak forward current90 A
Phase1
Maximum operating temperature175 Cel
Maximum output current8 A
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
eak_reflow_temperature__cel_NOT SPECIFIED
qualification_statusCOMMERCIAL
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.0550 µs
sub_categoryRectifier Diodes
surface mountNO
terminal coatingNOT SPECIFIED
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
ime_peak_reflow_temperature_max__s_NOT SPECIFIED
STTH806
Turbo 2 ultrafast - high voltage rectifier
Main product characteristics
K
I
F(AV)
V
RRM
T
j
V
F
(typ)
t
rr
(max)
8A
600 V
175° C
1.1 V
35 ns
A
K
A
NC
D
2
PAK
STTH806G
Features and benefits
A
K
TO-220AC
STTH806D
A
K
TO-220AC Ins
STTH806DIRG
Ultrafast switching
Low reverse current
Low thermal resistance
Reduces conduction and switching losses
Insulated package TO-220AC Ins
– Insulated voltage: 2500 V
RMS
– Typical package capacitance: 7 pF
Order codes
Part Number
STTH806G
Marking
STTH806G
STTH806G
STTH806D
STTH806DI
Description
The STTH806 uses ST Turbo2 600 V technology.
This device is specially suited for use in switching
power supplies, and industrial applications.
Table 1.
Symbol
V
RRM
I
F(RMS)
Repetitive peak reverse voltage
STTH806G-TR
STTH806D
STTH806DIRG
Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
Parameter
Value
600
TO-220AC, D
2
PAK
RMS forward current
TO-220 Ins
Average forward current,
δ
= 0.5
T
c
= 140° C
T
c
= 120° C
TO-220AC, D
2
PAK
TO-220 Ins
24
8
8
90
-65 to + 175
175
A
A
A
A
°C
°C
30
Unit
V
A
I
F(AV)
I
FSM
T
stg
T
j
1.
Surge non repetitive forward current t
p
= 10 ms Sinusoidal
Storage temperature range
Maximum operating junction temperature
(1)
condition to avoid thermal runaway for a diode on its own heatsink
dP
1
tot
-
-------------- < -------------------------
-
R
dT
th
(
j
a
)
j
August 2006
Rev 2
www.st.com
1/9
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