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MA4TD0670PIN

Description
0MHz - 800MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
CategoryWireless rf/communication    Radio frequency and microwave   
File Size77KB,3 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
Download Datasheet Parametric Compare View All

MA4TD0670PIN Overview

0MHz - 800MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

MA4TD0670PIN Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Characteristic impedance50 Ω
structureCOMPONENT
Maximum input power (CW)20 dBm
Maximum operating frequency800 MHz
Minimum operating frequency
RF/Microwave Device TypesWIDE BAND LOW POWER
Maximum voltage standing wave ratio1.8
Base Number Matches1
Silicon Bipolar MMIC
Cascadable Amplifier
Features
q
q
q
q
q
q
q
MA4TD0670
V3.00
Gold-Ceramic Microstrip Package Outline
1,2
.040
1,02
Cascadable 50Ω Gain Block
3dB Bandwidth: DC to 0.8 GHz
18.5 dB Typical Gain @ 0.5 GHz
Unconditionally Stable (k>1)
Low Voltage Operation
Hermetic Gold-Ceramic Microstrip Package
Tape and Reel Packaging Available
4
GND
RF INPUT
1
RF OUT
AND BIAS
3
.020
0,51
Description
M/A-COM’s MA4TD0670 is a high performance silicon bipolar
MMIC housed in a hermetic high reliability package for sur-
face mount usage. The MA4TD0670 is useful where a general
purpose 50Ω gain block with lower (3.0 dB) noise figure is
required. Typical applications include narrow and wide band
IF and RF amplifiers in industrial and military applications.
The MA4TD0670 is fabricated using a 10 GHz f
T
silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
22
20
18
16
14
12
10
8
6
4
2
0
0.1
2
.070
1,78
GND
.035
0,89
.004±.002
0,1±0,05
.495
±.030
12,57±0,76
Notes: (unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx = ±.005; mm .xx = ±.13
TYPICAL POWER GAIN vs FREQUENCY
Pin Configuration
Pin Number
1
2&4
3
Pin Description
RF Input
AC/DC Ground
RF Output and DC Bias
GAIN (dB)
Id=16mA
Ordering Information
1
10
FREQUENCY (GHz)
Model No.
MA4TD0670 PIN
MA4TD0670 TR
Package
Ceramic
Forward Tape and Reel
Electrical Specifications
@ T
A
= +25°C, I
d
= 16 mA; Z
0
= 50Ω
Symbol
Gp
∆Gp
f
3 dB
SWR
in
SWR
out
P
1 dB
NF
IP
3
t
D
V
d
dV/dT
Parameters
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
Input SWR
Output SWR
Output Power @ 1 dB Gain Compression
50
Noise Figure
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
Specifications Subject to Change Without Notice.
Test Conditions
f = 0.1 GHz
f = 0.1 to 0.6 GHz
-
f = 0.1 to 1.5 GHz
f = 0.1 to 1.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
-
-
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/°C
Min.
18.5
-
-
-
-
-
-
-
-
3.1
-
Typ.
19.5
±0.7
0.8
1.8
1.8
4.5
3.0
14.5
200
3.5
-8.0
Max.
22
±1.0
-
-
-
-
3.5
-
-
3.9
-
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
s
1
Asia/Pacific: Tel. +81 3 3263 8761
Fax +81 3 3263 8769
s
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020

MA4TD0670PIN Related Products

MA4TD0670PIN MA4TD0670TR
Description 0MHz - 800MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 0MHz - 800MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Reach Compliance Code unknown unknown
Characteristic impedance 50 Ω 50 Ω
structure COMPONENT COMPONENT
Maximum input power (CW) 20 dBm 20 dBm
Maximum operating frequency 800 MHz 800 MHz
RF/Microwave Device Types WIDE BAND LOW POWER WIDE BAND LOW POWER
Maximum voltage standing wave ratio 1.8 1.8
Base Number Matches 1 1

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