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USB6B1_06

Description
500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size106KB,9 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

USB6B1_06 Overview

500 W, UNIDIRECTIONAL, SILICON, TVS DIODE

USB6B1_06 Parametric

Parameter NameAttribute value
Number of terminals8
Number of components1
Minimum breakdown voltage6 V
Processing package descriptionPlastic, SOP-8
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingNickel Palladium
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipAVALANCHE
structuresingle
Diode component materialssilicon
polarityunidirectional
Diode typeTRANS voltage SUPPRESSOR diode
Maximum non-repetitive peak speed power500 W
USB6B1
Data line protection
Applications
Where transient overvoltage protection in
sensitive equipment is required, such as:
Universal Serial Bus ports
RS-423 interfaces
RS-485 interfaces
ISDN equipment
T1/E1 line cards
HDSL / ASDL interfaces
SO-8
Order Codes
Part Numbers
USB6B1
USB6B1RL
Marking
USB62
USB62
Features
Full diode bridge with integrated clamping
protection
Breakdown voltage: V
BR
= 6 V min.
Peak pulse power dissipation: P
PP
= 500 W
(8/20 µs)
Very low capacitance, compatible with high
debit data or signal rates.
Functional diagram
V
CC
I/O1
I/O2
GND
V
CC
I/O1
I/O2
GND
Description
In order to prevent fast transients from leading to
severe damages in a high speed data system, a
specific protection has been developed by
STMicroelectronics.
The
USB6B1
protects the two input lines against
overvoltage. Besides, this device also keeps the
power rails in a safe limit thanks to the integrated
Transil diode.
Complies with the following standards:
MIL STD 883C - Method 3015-6
class 3
C = 100 pF
R = 1500
Benefits
Provides protection for each line and between
the supply voltage and GND: 25 A, 8/20 µs.
High ESD protection level: up to level 3 per MIL
STD 883C-Method 3015-6
Separated inputs and outputs (so-called 4-point
structure) to improve ESD susceptibility.
Comprehensive package pin-out for immediate
implementation.
3 positive strikes and 3 negative strikes (F = 1 Hz)
IEC 61000-4-2 level 4
15 kV (air discharge)
8 kV (contact discharge)
August 2006
Rev 10
1/9
www.st.com
9
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