MT18LSDT3272DG-13ED1 datasheet, PDF

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MT18LSDT3272DG-13ED1: DescriptionSynchronous DRAM Module, 32MX72, 5.4ns, CMOS, PDMA168,; Categorystorage storage; File Size588KB，13 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/

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MT18LSDT3272DG-13ED1 Overview

Synchronous DRAM Module, 32MX72, 5.4ns, CMOS, PDMA168,

MT18LSDT3272DG-13ED1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	DIMM, DIMM168
Reach Compliance Code	not_compliant
Maximum access time	5.4 ns
I/O type	COMMON
JESD-30 code	R-PDMA-N168
memory density	2415919104 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	72
Humidity sensitivity level	1
Number of terminals	168
word count	33554432 words
character code	32000000
Maximum operating temperature	55 °C
Minimum operating temperature
organize	32MX72
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	235
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum standby current	0.036 A
Maximum slew rate	1.503 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
Base Number Matches	1

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256MB, 512MB, 1GB (x72, ECC, DR) 168-Pin SDRAM RDIMM

Features

SDRAM RDIMM

MT18LSDT3272D – 256MB

MT18LSDT6472D – 512MB

MT18LSDT12872D – 1GB

For component data sheets, refer to Micron’s Web site:

www.micron.com

Features

• 168-pin, PC133-compliant registered dual in-line

memory module (RDIMM)

• Phase-lock loop (PLL) clock driver to reduce loading

• Uses 133 MHz SDRAM components

• Supports ECC error detection and correction

• 256MB (32 Meg x 72), 512MB (64 Meg x 72), and

1GB (128 Meg x 72)

• Single +3.3V power supply

• Fully synchronous; all signals are registered on the

positive edge of the PLL clock

• Internal pipelined operation; column address can be

changed every clock cycle

• Dual rank

• Internal SDRAM banks for hiding row access/

precharge

• Programmable burst lengths (BL): 1, 2, 4, 8, or full

page

• Auto precharge option

• Auto and self refresh modes: 15.625µs (256MB) or

7.81µs (512MB, 1GB) maximum periodic refresh

interval

• LVTTL-compatible inputs and outputs

• Serial presence-detect (SPD) with EEPROM

• Gold edge contacts

Figure 1:

168-Pin RDIMM (MO-161 R/C E)

PCB height: 43.18mm (1.7in)

Options

Marking

• Package

168-pin DIMM

168-pin DIMM (Pb-free)

• Frequency/CAS latency

133 MHz/CL = 2

-13E

133 MHz/CL = 3

-133

Notes: 1. CL = CAS (READ) latency; registered mode

will add one clock cycle to CL.

Table 1:

Key Timing Parameters

Data Rate (MT/s)

RCD

Speed Grade

-13E

-133

CL = 3

–

133

CL = 2

133

–

(ns)

PDF: 09005aef809b1694/Source: 09005aef809b166a

SD18C32_64_128x72D.fm - Rev. G 12/07 EN

Micron Technology, Inc., reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

MT18LSDT3272DG-13ED1 Related Products

	MT18LSDT3272DG-13ED1	MT18LSDT12872DY-133XX	MT18LSDT12872DG-133D1	MT18LSDT6472DG-133XX	MT18LSDT6472DG-133D1	MT18LSDT12872DG-133XX	MT18LSDT6472DY-133XX	MT18LSDT6472DY-13EXX	MT18LSDT6472DG-13EXX	MT18LSDT12872DY-133D1
Description	Synchronous DRAM Module, 32MX72, 5.4ns, CMOS, PDMA168,	Synchronous DRAM Module, 128MX72, 5.4ns, CMOS, DIMM-168	Synchronous DRAM Module, 128MX72, 5.4ns, CMOS, PDMA168,	Synchronous DRAM Module, 64MX72, 5.4ns, CMOS, DIMM-168	Synchronous DRAM Module, 64MX72, 5.4ns, CMOS, PDMA168	Synchronous DRAM Module, 128MX72, 5.4ns, CMOS, DIMM-168	Synchronous DRAM Module, 64MX72, 5.4ns, CMOS, LEAD FREE, DIMM-168	Synchronous DRAM Module, 64MX72, 5.4ns, CMOS, LEAD FREE, DIMM-168	Synchronous DRAM Module, 64MX72, 5.4ns, CMOS, DIMM-168	Synchronous DRAM Module, 128MX72, 5.4ns, CMOS, PDMA168,
Is it Rohs certified?	incompatible	conform to	incompatible	incompatible	incompatible	incompatible	conform to	conform to	incompatible	conform to
Reach Compliance Code	not_compliant	compliant	not_compliant	compliant	not_compliant	compliant	unknown	unknown	unknown	compliant
Maximum access time	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns
JESD-30 code	R-PDMA-N168	R-XDMA-N168	R-PDMA-N168	R-XDMA-N168	R-PDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-PDMA-N168
memory density	2415919104 bit	9663676416 bit	9663676416 bit	4831838208 bit	4831838208 bit	9663676416 bit	4831838208 bit	4831838208 bit	4831838208 bit	9663676416 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	72	72	72	72	72	72	72	72	72	72
Number of terminals	168	168	168	168	168	168	168	168	168	168
word count	33554432 words	134217728 words	134217728 words	67108864 words	67108864 words	134217728 words	67108864 words	67108864 words	67108864 words	134217728 words
character code	32000000	128000000	128000000	64000000	64000000	128000000	64000000	64000000	64000000	128000000
Maximum operating temperature	55 °C	55 °C	55 °C	55 °C	55 °C	55 °C	55 °C	55 °C	55 °C	55 °C
organize	32MX72	128MX72	128MX72	64MX72	64MX72	128MX72	64MX72	64MX72	64MX72	128MX72
Package body material	PLASTIC/EPOXY	UNSPECIFIED	PLASTIC/EPOXY	UNSPECIFIED	PLASTIC/EPOXY	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	PLASTIC/EPOXY
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	235	260	235	235	235	235	260	260	235	260
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	30	30	30	30	30	30	30	30	30	30
Is it lead-free?	Contains lead	Lead free	Contains lead	Contains lead	Contains lead	Contains lead	-	-	-	Lead free
package instruction	DIMM, DIMM168	DIMM,	DIMM, DIMM168	DIMM,	-	DIMM,	DIMM,	DIMM,	DIMM,	DIMM, DIMM168
Maker	-	Micron Technology	-	-	-	Micron Technology	Micron Technology	Micron Technology	Micron Technology	Micron Technology
Parts packaging code	-	DIMM	-	DIMM	-	DIMM	DIMM	DIMM	DIMM	-
Contacts	-	168	-	168	-	168	168	168	168	-
ECCN code	-	EAR99	-	EAR99	-	EAR99	EAR99	EAR99	EAR99	-
access mode	-	DUAL BANK PAGE BURST	-	DUAL BANK PAGE BURST	-	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	-
Other features	-	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-
Number of functions	-	1	-	1	-	1	1	1	1	-
Number of ports	-	1	-	1	-	1	1	1	1	-
Operating mode	-	SYNCHRONOUS	-	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-
self refresh	-	YES	-	YES	-	YES	YES	YES	YES	-
Maximum supply voltage (Vsup)	-	3.6 V	-	3.6 V	-	3.6 V	3.6 V	3.6 V	3.6 V	-
Minimum supply voltage (Vsup)	-	3 V	-	3 V	-	3 V	3 V	3 V	3 V	-

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