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MT18LSDT3272G-10EXX

Description
Synchronous DRAM Module, 32MX72, 6ns, CMOS, DIMM-168
Categorystorage    storage   
File Size822KB,27 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Download Datasheet Parametric Compare View All

MT18LSDT3272G-10EXX Overview

Synchronous DRAM Module, 32MX72, 6ns, CMOS, DIMM-168

MT18LSDT3272G-10EXX Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeDIMM
package instructionDIMM,
Contacts168
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time6 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XDMA-N168
JESD-609 codee0
memory density2415919104 bit
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals168
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature55 °C
Minimum operating temperature
organize32MX72
Package body materialUNSPECIFIED
encapsulated codeDIMM
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)235
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperature30
Base Number Matches1
256MB, 512MB, 1GB (x72, ECC, SR) 168-PIN SDRAM RDIMM
Features
Synchronous DRAM Module
MT18LSDT3272 – 256MB
MT18LSDT6472 – 512MB
MT18LSDT12872 – 1GB
For the latest data sheet, please refer to the Micron
Web site:
www.micron.com/products/modules
Features
• 168-pin, PC100- and PC133-compliantm dual in-
line memory module (DIMM)
• Registered inputs with one-clock delay
• Phase-lock loop (PLL) clock driver to reduce loading
• Utilizes 125 MHz and 133 MHz SDRAM components
• Supports ECC error detection and correction
• 256MB (32 Meg x 72), 512MB (64 Meg x 72), and 1GB
(128 Meg x 72)
• Single +3.3V power supply
• Fully synchronous; all signals registered on positive
edge of PLL clock
• Internal pipelined operation; column address can
be changed every clock cycle
• Internal SDRAM banks for hiding row access/precharge
• Programmable burst lengths: 1, 2, 4, 8, or full page
• Auto Precharge, Includes Concurrent Auto Precharge
• Auto Refresh Mode
• Self Refresh Mode: 64ms, 4,096-cycle refresh
(256MB); 8,192 cycle refresh (512MB, 1GB)
• LVTTL-compatible inputs and outputs
• Serial Presence-Detect (SPD)
• Gold edge contacts
Table 1:
Timing Parameters
CL = CAS (READ) latency
Module
Marking
-13E
-133
-10E
Clock
Frequency
133 MHz
133 MHz
100 MHz
Access Time
CL = 2
5.4ns
9ns
CL = 3
5.4ns
7.5ns
Setup
Time
1.5
1.5
2ns
Hold
Time
0.8
0.8
1ns
Figure 1:
168-Pin DIMM (MO-161)
Standard 1.70in. (43.18mm)
Low Profile 1.20in. (30.48mm)
Options
• Package
168-pin DIMM (standard)
168-pin DIMM (lead-free)
• Frequency/CAS Latency
2
133 MHz/CL = 2
133 MHz/CL = 3
100 MHz/CL = 2
• PCB
Standard 1.70in. (43.18mm)
Low Profile 1.20in. (30.48mm)
Marking
G
Y
1
-13E
-133
-10E
1
See page 2 note
See page 2 note
Notes: 1. Contact Micron for product availability.
2. Registered mode adds one clock cycle to CL.
Table 2:
Address Table
Parameter
256MB
4K
4 (BA0, BA1)
128Mb (32 Meg x 4)
4K (A0–A11)
2K (A0–A9, A11)
1 (S0#, S2#)
512MB
8K
4 (BA0, BA1)
256Mb (64 Meg x 4)
8K (A0–A12)
2K (A0–A9, A11)
1 (S0#, S2#)
1GB
8K
4 (BA0, BA1)
512Mb (128 Meg x 4)
8K (A0–A12)
4K (A0–A9, A11, A12)
1 (S0#, S2#)
Refresh Count
Device Banks
Device Configuration
Row Addressing
Column Addressing
Module Ranks
PDF: 09005aef809b1694/Source: 09005aef809b15eb
SD18C32_64_128x72G.fm - Rev. C 3/05 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

MT18LSDT3272G-10EXX Related Products

MT18LSDT3272G-10EXX MT18LSDT6472G-10EXX MT18LSDT12872Y-10EXX MT18LSDT12872G-10EXX MT18LSDT3272Y-10EXX MT18LSDT6472Y-10EXX
Description Synchronous DRAM Module, 32MX72, 6ns, CMOS, DIMM-168 Synchronous DRAM Module, 64MX72, 6ns, CMOS, DIMM-168 Synchronous DRAM Module, 128MX72, 6ns, CMOS, LEAD FREE, DIMM-168 Synchronous DRAM Module, 128MX72, 6ns, CMOS, DIMM-168 Synchronous DRAM Module, 32MX72, 6ns, CMOS, LEAD FREE, DIMM-168 Synchronous DRAM Module, 64MX72, 6ns, CMOS, LEAD FREE, DIMM-168
Is it Rohs certified? incompatible incompatible conform to incompatible conform to conform to
Parts packaging code DIMM DIMM DIMM DIMM DIMM DIMM
package instruction DIMM, DIMM, DIMM, DIMM, DIMM, DIMM,
Contacts 168 168 168 168 168 168
Reach Compliance Code unknown unknown compliant compliant compliant unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 6 ns 6 ns 6 ns 6 ns 6 ns 6 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 code R-XDMA-N168 R-XDMA-N168 R-XDMA-N168 R-XDMA-N168 R-XDMA-N168 R-XDMA-N168
memory density 2415919104 bit 4831838208 bit 9663676416 bit 9663676416 bit 2415919104 bit 4831838208 bit
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
memory width 72 72 72 72 72 72
Number of functions 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1
Number of terminals 168 168 168 168 168 168
word count 33554432 words 67108864 words 134217728 words 134217728 words 33554432 words 67108864 words
character code 32000000 64000000 128000000 128000000 32000000 64000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 55 °C 55 °C 55 °C 55 °C 55 °C 55 °C
organize 32MX72 64MX72 128MX72 128MX72 32MX72 64MX72
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM DIMM DIMM DIMM DIMM
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius) 235 235 260 235 260 260
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
self refresh YES YES YES YES YES YES
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount NO NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 30 30 30 30 30
JESD-609 code e0 - e4 - e4 e4
Terminal surface Tin/Lead (Sn/Pb) - Gold (Au) - Gold (Au) Gold (Au)
Maker - - Micron Technology Micron Technology Micron Technology Micron Technology

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