MT18LSDT6472Y-10EXX datasheet, PDF

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MT18LSDT6472Y-10EXX: DescriptionSynchronous DRAM Module, 64MX72, 6ns, CMOS, LEAD FREE, DIMM-168; Categorystorage storage; File Size822KB，27 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/; Environmental Compliance

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MT18LSDT6472Y-10EXX Overview

Synchronous DRAM Module, 64MX72, 6ns, CMOS, LEAD FREE, DIMM-168

MT18LSDT6472Y-10EXX Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Micron Technology
Parts packaging code	DIMM
package instruction	DIMM,
Contacts	168
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-XDMA-N168
JESD-609 code	e4
memory density	4831838208 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	72
Number of functions	1
Number of ports	1
Number of terminals	168
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	55 °C
Minimum operating temperature
organize	64MX72
Package body material	UNSPECIFIED
encapsulated code	DIMM
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
self refresh	YES
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Gold (Au)
Terminal form	NO LEAD
Terminal location	DUAL
Maximum time at peak reflow temperature	30

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256MB, 512MB, 1GB (x72, ECC, SR) 168-PIN SDRAM RDIMM

Features

Synchronous DRAM Module

MT18LSDT3272 – 256MB

MT18LSDT6472 – 512MB

MT18LSDT12872 – 1GB

For the latest data sheet, please refer to the Micron



Web site:

www.micron.com/products/modules

Features

• 168-pin, PC100- and PC133-compliantm dual in-

line memory module (DIMM)

• Registered inputs with one-clock delay

• Phase-lock loop (PLL) clock driver to reduce loading

• Utilizes 125 MHz and 133 MHz SDRAM components

• Supports ECC error detection and correction

• 256MB (32 Meg x 72), 512MB (64 Meg x 72), and 1GB

(128 Meg x 72)

• Single +3.3V power supply

• Fully synchronous; all signals registered on positive

edge of PLL clock

• Internal pipelined operation; column address can

be changed every clock cycle

• Internal SDRAM banks for hiding row access/precharge

• Programmable burst lengths: 1, 2, 4, 8, or full page

• Auto Precharge, Includes Concurrent Auto Precharge

• Auto Refresh Mode

• Self Refresh Mode: 64ms, 4,096-cycle refresh

(256MB); 8,192 cycle refresh (512MB, 1GB)

• LVTTL-compatible inputs and outputs

• Serial Presence-Detect (SPD)

• Gold edge contacts

Table 1:

Timing Parameters

CL = CAS (READ) latency

Module

Marking

-13E

-133

-10E

Clock

Frequency

133 MHz

100 MHz

Access Time

CL = 2

5.4ns

–

9ns

CL = 3

–

5.4ns

7.5ns

Setup

Time

1.5

2ns

Hold

Time

0.8

1ns

Figure 1:

168-Pin DIMM (MO-161)

Standard 1.70in. (43.18mm)

Low Profile 1.20in. (30.48mm)

Options

• Package

168-pin DIMM (standard)

168-pin DIMM (lead-free)

• Frequency/CAS Latency

133 MHz/CL = 2

133 MHz/CL = 3

100 MHz/CL = 2

• PCB

Standard 1.70in. (43.18mm)

Low Profile 1.20in. (30.48mm)

Marking

-13E

-133

-10E

See page 2 note

Notes: 1. Contact Micron for product availability.

2. Registered mode adds one clock cycle to CL.

Table 2:

Address Table

Parameter

256MB

4 (BA0, BA1)

128Mb (32 Meg x 4)

4K (A0–A11)

2K (A0–A9, A11)

1 (S0#, S2#)

512MB

4 (BA0, BA1)

256Mb (64 Meg x 4)

8K (A0–A12)

2K (A0–A9, A11)

1 (S0#, S2#)

1GB

4 (BA0, BA1)

512Mb (128 Meg x 4)

8K (A0–A12)

4K (A0–A9, A11, A12)

1 (S0#, S2#)

Refresh Count

Device Banks

Device Configuration

Row Addressing

Column Addressing

Module Ranks

PDF: 09005aef809b1694/Source: 09005aef809b15eb

SD18C32_64_128x72G.fm - Rev. C 3/05 EN

Micron Technology, Inc., reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

MT18LSDT6472Y-10EXX Related Products

	MT18LSDT6472Y-10EXX	MT18LSDT6472G-10EXX	MT18LSDT3272G-10EXX	MT18LSDT12872Y-10EXX	MT18LSDT12872G-10EXX	MT18LSDT3272Y-10EXX
Description	Synchronous DRAM Module, 64MX72, 6ns, CMOS, LEAD FREE, DIMM-168	Synchronous DRAM Module, 64MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 32MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 128MX72, 6ns, CMOS, LEAD FREE, DIMM-168	Synchronous DRAM Module, 128MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 32MX72, 6ns, CMOS, LEAD FREE, DIMM-168
Is it Rohs certified?	conform to	incompatible	incompatible	conform to	incompatible	conform to
Parts packaging code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
package instruction	DIMM,	DIMM,	DIMM,	DIMM,	DIMM,	DIMM,
Contacts	168	168	168	168	168	168
Reach Compliance Code	unknown	unknown	unknown	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	6 ns	6 ns	6 ns	6 ns	6 ns	6 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 code	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168
memory density	4831838208 bit	4831838208 bit	2415919104 bit	9663676416 bit	9663676416 bit	2415919104 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	72	72	72	72	72	72
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	168	168	168	168	168	168
word count	67108864 words	67108864 words	33554432 words	134217728 words	134217728 words	33554432 words
character code	64000000	64000000	32000000	128000000	128000000	32000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	55 °C	55 °C	55 °C	55 °C	55 °C	55 °C
organize	64MX72	64MX72	32MX72	128MX72	128MX72	32MX72
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	260	235	235	260	235	260
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
self refresh	YES	YES	YES	YES	YES	YES
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	30	30	30	30	30	30
Maker	Micron Technology	-	-	Micron Technology	Micron Technology	Micron Technology
JESD-609 code	e4	-	e0	e4	-	e4
Terminal surface	Gold (Au)	-	Tin/Lead (Sn/Pb)	Gold (Au)	-	Gold (Au)

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