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BZV85C47

Description
SILICON PLANAR ZENER DIODES
File Size58KB,3 Pages
ManufacturerChongqing Pingwei Enterprise co.,Ltd.
Websitehttp://www.perfectway.cn
Chongqing Pingwei Industrial Co., Ltd. is a power semiconductor IDM product company integrating chip design, packaging and testing, application and reliability testing services. The company takes power semiconductor devices as its industrial foundation, and has established product development, manufacturing and testing platforms for smart terminals, industrial control, Internet of Things, new energy vehicles, 5G communications, home appliances, satellite Internet, security electronics, green lighting and other market fields, providing high-reliability medium, low voltage and high voltage power devices, modules and other products and system solutions, always putting user needs first. Specializing in the production of various types of semiconductor devices (rectifier diodes, fast recovery diodes, TVS, Zener diodes, Schottky, rectifier bridges, MOSFET, IGBT, synchronous rectifier devices, SIC and GaN devices, etc.).
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SILICON PLANAR ZENER DIODES

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CHONGQING PINGYANG ELECTRONICS CO.,LTD.
BZV85C2V7 THRU BZV85C220
SILICON PLANAR ZENER DIODES
FEATURES
·Voltage
Range: 2.7V to 220V
·Double
siug type construction
DO-41
1.0(25.4)
MIN.
.205(5.2)
.166(4.2)
.034(0.9)
.028(0.7)
DIA.
DIA.
MECHANICAL DATA
·Case:
Molded plastic
·Epoxy:
UL94V-0 rate flame retardant
·Lead:
MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color
band denotes cathode end
·Mounting
position:
Any
·Weight:
0.33 grams
.107(2.7)
.080(2.0)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
Absolute Maximum Ratings
(T
a
=25°C)
SYMBOL
VALUE
1)
units
W
°C
Zener Current see Table
“Characterstics”
Power Dissipation at T
amb
=25°C
Junction Temperature
1)
P
tot
T
J
1
200
Valid provided that leads at a distance of 8 mm form case are kept at ambient temperature.
Characteristics at T
amb
=25°C
SYMBOL
Min.
--
--
Typ.
--
--
Max.
170
1)
1.2
units
K/W
V
Thermal Resistance Junction to
Ambient Air
Forward Voltage at I
F
=200mA
R
thA
V
F
Valid provided that leads at a distance of 8 mm form case are kept at ambient temperature.
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