Data Sheet No. PD60235_B
IPS1011(
S
)(
R
)PbF
INTELLIGENT POWER LOW SIDE SWITCH
Features
•
•
•
•
•
•
•
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
ESD protection
Optimized Turn On/Off for EMI
Diagnostic on the input current
Product Summary
Rds(on)
13m
Ω
(
max.)
Vclamp
36V
Ishutdown
85A (typ.)
Packages
Description
The IPS1011(S)(R)PbF is a three terminal Intelligent
Power Switch (IPS) that features a low side MOSFET with
over-current, over-temperature, ESD protection and drain
to source active clamp. This device offers protections and
the high reliability required in harsh environments. The
switch provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165°C or
when the drain current reaches 85A. The device restarts
once the input is cycled. A serial resistance connected to
the input provides the diagnostic. The avalanche capability
is significantly enhanced by the active clamp and covers
most inductive load demagnetizations.
TO-220
IPS1011PbF
D²Pak
D-Pak
IPS1011SPbF IPS1011RPbF
Typical Connection
+Bat
Load
D
1
Input R
Input Signal
V Diag
IN
S
3
2
Control
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IPS1011(
S
)(
R
)PbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to Ground lead. (Tambient=25°C unless otherwise specified).
Symbol
Vds
Vds cont.
Vin
Isd cont.
Pd
Parameter
Maximum drain to source voltage
Maximum continuous drain to source voltage
Maximum input voltage
Max diode continuous current (limited by thermal dissipation)
Maximum power dissipation (internally limited by thermal protection)
Rth=5°C/W IPS1011
Rth=40°C/W IPS1011S 1” sqr. footprint
Rth=50°C/W IPS1011R 1” sqr. footprint
Electrostatic discharge voltage (Human body) C=100pF, R=1500Ω
Between drain and source
Other combinations
Electrostatic discharge voltage (Machine Model) C=200pF,R=0Ω
Between drain and source
Other combinations
Max. storage & operating temperature junction temperature
Lead soldering temperature (10 seconds)
Min.
-0.3
-
-0.3
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max.
36
28
6
5
25
3.1
2.5
4
3
0.5
0.3
150
300
Units
V
V
V
A
W
ESD
kV
Tj max.
Tsoldering
-40
⎯
°C
°C
Thermal Characteristics
Symbol
Rth1
Rth2
Rth1
Rth2
Rth3
Rth1
Rth2
Rth3
Parameter
Thermal resistance junction to ambient IPS1011 TO-220 free air
Thermal resistance junction to case IPS1011 TO-220
Thermal resistance junction to ambient IPS1011S D²Pak std. footprint
Thermal resistance junction to ambient IPS1011S D²Pak 1” sqr. footprint
Thermal resistance junction to case IPS1011S D²Pak
Thermal resistance junction to ambient IPS1011R D-Pak std. footprint
Thermal resistance junction to ambient IPS1011R D-Pak 1” sqr. footprint
Thermal resistance junction to case IPS1011R D-Pak
Typ.
50
1.2
60
40
1.2
70
50
1.2
Max.
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Units
°C/W
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol
VIH
VIL
Ids
Parameter
High level input voltage
Low level input voltage
Continuous drain current, Tambient=85°C, Tj=125°C, Vin=5V
Rth=5°C/W IPS1011
Rth=40°C/W IPS1011S 1” sqr. Footprint
Rth=50°C/W IPS1011R 1” sqr. Footprint
Recommended resistor in series with IN pin to generate a diagnostic
Max recommended load inductance (including line inductance) (1)
Max frequency (switching losses = conduction losses)
Max Input rising time
Min.
4.5
0
⎯
⎯
⎯
Max.
5.5
0.5
18
6.5
6
10
5
200
1
Units
A
Rin
Max L
Max F
Max t rise
0.5
⎯
⎯
⎯
k
Ω
µH
Hz
µs
(1) Higher inductance is possible if maximum load current is limited - see figure 11
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IPS1011(
S
)(
R
)PbF
Static Electrical Characteristics
Tj=25°C, Vcc=14V (unless otherwise specified)
Symbol
Rds(on)
Idss1
Idss2
V clamp1
V clamp2
Vin clamp
Vth
Parameter
ON state resistance Tj=25°C
ON state resistance Tj=150°C (2)
Drain to source leakage current
Drain to source leakage current
Drain to source clamp voltage 1
Drain to source clamp voltage 2
IN to source pin clamp voltage
Input threshold voltage
Min.
⎯
⎯
⎯
⎯
Typ.
10
19
0.1
0.2
39
40
6.5
1.7
Max.
13
25
10
20
⎯
Units
mΩ
µA
Test Conditions
Vin=5V, Ids=30A
Vcc=14V, Tj=25°C
Vcc=28V, Tj=25°C
Id=20mA
Id=5A
Iin=1mA
Id=10mA
36
⎯
5.5
⎯
42
7.5
⎯
V
Switching Electrical Characteristics
Vcc=14V, Resistive load=0.5Ω, Rinput=50Ω, Vin=5V, Tj=25°C
Symbol
Tdon
Tr
Tdoff
Tf
Eon + Eoff
Parameter
Turn-on delay time to 20%
Rise time 20% to 80%
Turn-off delay time to 80%
Fall time 80% to 20%
Turn on and off energy
Min.
15
20
100
30
⎯
Typ.
50
50
330
70
5
Max.
150
100
1000
150
⎯
Units
µs
mJ
Test Conditions
See figure 2
Protection Characteristics
Symbol
Tsd
Isd
OV
Vreset
Treset
Parameter
Over temperature threshold
Over current threshold
Over voltage protection (not active when
the device is ON )
IN protection reset threshold
Time to reset protection
Min.
150(2)
60
34
⎯
Typ.
165
85
37
1.7
50
Max.
⎯
Units
°C
A
V
V
µs
Test Conditions
See figure 1
See figure 1
110
⎯
⎯
15(2)
200
Vin=0V
Diagnostic
Symbol
Iin, on
Iin, off
Parameter
ON state IN positive current
OFF state IN positive current
(after protection latched )
Min.
15
150
Typ.
32
230
Max.
70
350
Units
µA
Test Conditions
Vin=5V
Vin=5V
(2) Guaranteed by design
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IPS1011(
S
)(
R
)PbF
Lead Assignments
2 - Drain
2 - Drain
1- In
2- D
3- S
1 2 3
D²Pak – D Pak
1
2
3
TO220
Functional Block Diagram
All values are typical
DRAIN
37V
IN
75Ω
15kΩ
Vds > O.V.
43V
150kΩ
S
R
Q
6.5V
Tj > 165°C
I > Isd
2kΩ
SOURCE
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IPS1011(
S
)(
R
)PbF
All curves are typical values. Operating in the shaded area is not recommended.
Vin
Ids
Ishutdown
Isd
t<T reset
t>T reset
80%
Vin
20%
Tr-in
80%
Tj
Tsd
165°C
Tshutdown
Ids
20%
Td on
Tr
Td off
Tf
Vdiag
normal
fault
Vds
Figure 1 – Timing diagram
Figure 2 – IN rise time & switching definitions
T clamp
Vin
L
Rem : During active clamp,
Vload is negative
V load
R
+
14V
-
Vds
S
Ids
Ids
Vds clamp
D
IN
5V
Vds
Vin
Vcc
0V
See Application Notes to evaluate power dissipation
Figure 3 – Active clamp waveforms
Figure 4 – Active clamp test circuit
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