FDS6670AS
30V N-Channel PowerTrench
®
SyncFET™
May
2008
tm
FDS6670AS
30V N-Channel PowerTrench
®
SyncFET
™
General Description
The FDS6670AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge.
The FDS6670AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Features
•
13.5 A, 30 V.
R
DS(ON)
max= 9.0 mΩ @ V
GS
= 10 V
R
DS(ON)
max= 11.5 mΩ @ V
GS
= 4.5 V
•
•
•
Includes SyncFET Schottky body diode
Low gate charge (27nC typical)
High performance trench technology for extremely low
R
DS(ON)
and fast switching
•
•
High power and current handling capability
RoHS Compliant
Applications
•
DC/DC converter
•
Low side notebook
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
30
±20
(Note 1a)
Units
V
V
A
W
13.5
50
2.5
1.2
1
–55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS6670AS
Device
FDS6670AS
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
©2008
Fairchild Semiconductor Corporation
FDS6670AS Rev A
2
(X)
FDS6670AS
30V N-Channel PowerTrench
®
SyncFET™
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= 1 mA
I
D
= 10 mA, Referenced to 25°C
V
DS
= 24 V,
V
GS
=
±20
V,
V
GS
= 0 V
V
DS
= 0 V
Min
30
Typ
Max Units
V
Off Characteristics
27
500
±100
mV/°C
µA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= 1 mA
I
D
= 10 mA, Referenced to 25°C
V
GS
= 10 V,
I
D
= 13.5 A
I
D
= 11.2 A
V
GS
= 4.5 V,
V
GS
=10 V, I
D
=13.5A, T
J
=125°C
V
GS
= 10 V,
V
DS
= 10 V,
V
DS
= 5 V
I
D
= 13.5 A
1
1.7
–4
7.5
9
10
3
V
mV/°C
9
11.5
12.5
mΩ
I
D(on)
g
FS
50
66
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
GS
= 15 mV, f = 1.0 MHz
(Note 2)
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
1540
440
160
2.1
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d
(
off
)
t
f
t
d(on)
t
r
t
d
(
off
)
t
f
Q
g(TOT)
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
10
V
DS
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
5
27
18
13
V
DS
= 15 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
Ω
15
24
13
27
V
DD
= 15 V,
I
D
= 13.5 A,
16
4.2
5.1
20
10
44
32
23
27
38
23
38
22
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
Total Gate Charge at Vgs=10V
Total Gate Charge at Vgs=5V
Gate–Source Charge
Gate–Drain Charge
FDS6670AS Rev A2 (X)
FDS6670AS
30V N-Channel PowerTrench
®
SyncFET™
Electrical Characteristics
Symbol
V
SD
t
rr
Q
rr
Notes: 1.
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Test Conditions
V
GS
= 0 V, I
S
= 3.5 A
V
GS
= 0 V, I
S
= 7 A
I
F
= 13.5A,
d
iF
/d
t
= 300 A/µs
Min
Typ
0.5
0.6
20
15
Max Units
0.7
V
nS
nC
Drain–Source Diode Characteristics and Maximum Ratings
(Note 2)
(Note 2)
(Note 3)
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 50°C/W when
mounted on a 1 in
2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3.
See “SyncFET Schottky body diode characteristics” below.
FDS6670AS Rev A2 (X)
FDS6670AS
30V N-Channel PowerTrench
®
SyncFET™
Typical Characteristics
50
V
GS
= 10V
40
6.0V
30
4.5V
3.0V
3.5V
4.0V
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.6
2.2
V
GS
= 3.0V
1.8
3.5V
1.4
20
4.0V
4.5V
6.0V
10V
10
2.5V
0
0
0.5
1
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
2
1
0.6
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.025
1.4
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 13.5A
V
GS
= 10V
1.2
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 6.75A
0.02
1
0.015
T
A
= 125 C
o
0.8
0.01
T
A
= 25 C
o
0.6
-50
-25
0
25
50
75
o
T
J
, JUNCTION TEMPERATURE ( C)
100
125
0.005
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with
Temperature.
50
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
40
I
D
, DRAIN CURRENT (A)
V
GS
= 0V
1
T
A
= 125
o
C
25 C
o
30
0.1
-55 C
0.01
o
20
T
A
= 125
o
C
-55 C
o
10
25
o
C
0
1
1.5
2
2.5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.5
0.001
0
0.1
0.2
0.3
0.4
0.5
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
0.6
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6670AS Rev A2 (X)
FDS6670AS
30V N-Channel PowerTrench
®
SyncFET™
Typical Characteristics
(continued)
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
=13.5A
V
DS
= 10V
20V
2400
f = 1MHz
V
GS
= 0 V
8
15V
CAPACITANCE (pF)
1800
C
iss
6
1200
4
C
oss
600
2
C
rss
0
0
5
10
15
20
Q
g
, GATE CHARGE (nC)
25
30
0
0
5
10
15
20
25
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
R
DS(ON)
LIMIT
100
µ
s
1ms
10ms
100ms
1s
10s
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
R
θ
JA
= 125°C/W
T
A
= 25°C
I
D
, DRAIN CURRENT (A)
40
10
30
1
DC
20
0.1
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25 C
o
10
0.01
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 125 °C/W
P(pk)
t
1
t
2
SINGLE PULSE
0.01
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6670AS Rev A2(X)
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