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BDX53B_07

Description
8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size74KB,7 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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BDX53B_07 Overview

8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB

BDX53B - BDX53C
BDX54B - BDX54C
Complementary power Darlington transistors
Features
Good h
FE
linearity
High f
T
frequency
Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
3
1
2
Application
Audio amplifiers
Linear and switching industrial equipment
TO-220
Description
The devices are manufactured in planar base
island technology with monolithic Darlington
configuration.
Figure 1.
Internal schematic diagram
R1 typ.= 10 kΩ
R2 typ.= 150
Table 1.
Device summary
Order code
BDX53B
BDX53C
BDX54B
BDX54C
Marking
BDX53B
BDX53C
TO-220
BDX54B
BDX54C
Tube
Package
Packaging
October 2007
Rev 4
1/7
www.st.com
7
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