®
BUL138
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
s
s
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125
o
C
1
3
2
APPLICATIONS
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The BUL138 is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
Value
800
400
9
5
10
2
4
80
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
o
C
C
June 2001
1/6
BUL138
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
1.56
62.5
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CES
I
CEO
V
CEO(sus)
V
EBO
V
CE(sat)
∗
Parameter
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
B
= 0)
Collector-Emitter
Sustaining Voltage
Emitter-Base Voltage
Collector-Emitter
Saturation Voltage
Test Conditions
V
CE
= 800 V
V
CE
= 800 V
V
CE
= 400 V
I
C
= 100 mA
I
E
= 10 mA
I
C
I
C
I
C
I
C
I
C
=
=
=
=
=
1
2
3
4
5
A
A
A
A
A
I
B
I
B
I
B
I
B
I
B
=
=
=
=
=
0.2 A
0.4 A
0.6 A
1A
1A
L = 25 mH
400
9
0.5
0.7
1
1
0.7
1.1
1.3
1.5
8
10
2.4
I
B1
= 0.4 A
R
BB
= 0
Ω
L = 200
µH
I
B1
= 0.4 A
R
BB
= 0
Ω
L = 200
µH
0.7
50
1
75
40
T
j
= 125 C
o
Min.
Typ.
Max.
100
500
250
Unit
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
V
BE(sat)
∗
Base-Emitter
Saturation Voltage
DC Current Gain
RESISTIVE LOAD
Storage Time
INDUCTIVE LOAD
Storage Time
Fall Time
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 1 A
I
C
= 2 A
I
C
= 3 A
I
C
= 2 A
I
C
= 10 mA
I
C
= 2 A
V
CC
= 250 V
I
C
= 2 A
V
BE(off)
= -5 V
V
CL
= 250 V
I
C
= 2 A
V
BE(off)
= -5V
V
CL
= 250 V
T
j
= 125
o
C
I
B
= 0.2 A
I
B
= 0.4 A
I
B
= 0.6 A
V
CE
= 5 V
V
CE
= 5 V
I
B1
= -I
B2
= 0.4 A
h
FE
∗
t
s
t
s
t
f
t
s
t
f
3.5
1.4
100
µs
µs
ns
µs
ns
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
Safe Operating Areas
Derating Curve
2/6
BUL138
Reverse Biased SOA
RBSOA and Inductive Load Switching Test
Circuits
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
4/6
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