Freescale Semiconductor
Technical Data
Document Number: MRF6V2150N
Rev. 2, 4/2008
RF Power Field - Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for CW large - signal output and driver applications with
frequencies up to 450 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
•
Typical CW Performance at 220 MHz: V
DD
= 50 Volts, I
DQ
= 450 mA,
P
out
= 150 Watts
Power Gain — 25 dB
Drain Efficiency — 68.3%
•
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW
Output Power
Features
•
Integrated ESD Protection
•
Excellent Thermal Stability
•
Facilitates Manual Gain Control, ALC and Modulation Techniques
•
200°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6V2150NR1
MRF6V2150NBR1
10 - 450 MHz, 150 W, 50 V
LATERAL N - CHANNEL
SINGLE - ENDED
BROADBAND
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6V2150NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6V2150NBR1
PARTS ARE SINGLE - ENDED
RF
in
/V
GS
RF
out
/V
DS
RF
in
/V
GS
RF
out
/V
DS
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5 +110
- 0.5 + 12
- 65 to +150
150
200
Unit
Vdc
Vdc
°C
°C
°C
©
Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
MRF6V2150NR1 MRF6V2150NBR1
1
RF Device Data
Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 150 W CW
Symbol
R
θJC
Value
(1,2)
0.24
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Drain - Source Breakdown Voltage
(I
D
= 75 mA, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 400
μAdc)
Gate Quiescent Voltage
(V
DD
= 50 Vdc, I
D
= 450 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
1.6
93
163
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
1.5
—
1.62
2.6
0.26
3
3.5
—
Vdc
Vdc
Vdc
I
DSS
I
DSS
V
(BR)DSS
I
GSS
—
—
110
—
—
—
—
—
2.5
50
—
10
mA
μAdc
Vdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 450 mA, P
out
= 150 W, f = 220 MHz, CW
Power Gain
G
ps
23.5
25
26.5
Drain Efficiency
Input Return Loss
η
D
IRL
66
—
68.3
- 17
—
-9
dB
%
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
ATTENTION: The MRF6V2150N and MRF6V2150NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting)
PRIOR TO STARTING SYSTEM DESIGN
to
ensure proper mounting of these devices.
MRF6V2150NR1 MRF6V2150NBR1
2
RF Device Data
Freescale Semiconductor
B3
+
B1
V
BIAS
+
C1
+
C2
+
C3
C4
C5
C6
C7
R1
B2
L2
C17
C18
C19
C20
V
SUPPLY
L1
C8
RF
INPUT
C9
C10 C11 R2
Z3
Z4
Z5
L3
Z7
Z6
Z8
Z9
C14
C15
C16
RF
OUTPUT
Z10
C23
C21
C22
Z11
Z1
C12
Z2
C13
DUT
Z1
Z2
Z3
Z4
Z5
Z6, Z7
0.352″
0.944″
1.480″
0.276″
0.434″
0.298″
x 0.082″
x 0.082″
x 0.082″
x 0.220″
x 0.220″
x 0.630″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z8
Z9
Z10
Z11
PCB
0.443″ x 0.170″ Microstrip
2.360″ x 0.170″ Microstrip
0.502″ x 0.170″ Microstrip
0.443″ x 0.082″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″,
ε
r
= 2.55
Figure 2. MRF6V2150NR1(NBR1) Test Circuit Schematic
Table 6. MRF6V2150NR1(NBR1) Test Circuit Component Designations and Values
Part
B1, B2
B3
C1
C2
C3
C4, C17
C5, C18
C6, C11, C19
C7, C8, C15, C16
C9, C12, C14, C23
C10
C13
C20
C21
C22
L1
L2
L3
R1
R2
Description
95
Ω,
100 MHz Long Ferrite Beads, Surface Mount
47
Ω,
100 MHz Short Ferrite Bead, Surface Mount
47
μF,
50 V Electrolytic Capacitor
22
μF,
35 V Tantalum Chip Capacitor
10
μF,
35 V Tantalum Chip Capacitor
39 K pF Chip Capacitors
22 K pF Chip Capacitors
0.1
μF,
50 V Chip Capacitors
2.2
μF,
50 V Chip Capacitors
1000 pF Chip Capacitors
220 nF Chip Capacitor
75 pF Chip Capacitor
470
μF,
63 V Electrolytic Capacitor
30 pF Chip Capacitor
33 pF Chip Capacitor
4 Turn #18 AWG, 0.18” ID
82 nH Inductor
17.5 nH Inductor
270
Ω,
1/4 W Chip Resistor
27
Ω,
1/4 W Chip Resistor
Part Number
2743021447
2743019447
476KXM063M
T494X226K035AT
T491D106K035AT
ATC200B393KT50XT
ATC200B203KT50XT
CDR33BX104AKYS
C1825C225J5RAC
ATC100B102JT50XT
C1812C224K5RAC
ATC100B750JT500XT
ESME630ELL471MK25S
ATC100B300JT500XT
ATC100B330JT500XT
None
1812SMS - 82NJL
B06TJL
CRCW12062700FKEA
CRCW12064R75FKEA
Manufacturer
Fair - Rite
Fair - Rite
Illinois Capacitor
Kemet
Kemet
ATC
ATC
Kemet
Kemet
ATC
Kemet
ATC
United Chemi - Con
ATC
ATC
None
Coilcraft
Coilcraft
Vishay
Vishay
MRF6V2150NR1 MRF6V2150NBR1
RF Device Data
Freescale Semiconductor
3
C1
C2
C3
+
B1
C4
C5
C6
B2
R1
C8
C15*
C16*
L2
C19
C18
C17
B3
+
C20
C7
C10
C11
C12
R2
C9
C14
L1
CUT OUT AREA
C21
C22
C23
L3
C13
MRF6V2150N/NB
Rev. 3
* Stacked
Figure 3. MRF6V2150NR1(NBR1) Test Circuit Component Layout
MRF6V2150NR1 MRF6V2150NBR1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
1000
100
100
C
oss
Measured with
±30
mV(rms)ac @ 1 MHz
V
GS
= 0 Vdc
C
rss
I
D
, DRAIN CURRENT (AMPS)
C
iss
C, CAPACITANCE (pF)
10
10
T
C
= 25°C
1
0
10
20
30
40
50
V
DS
, DRAIN−SOURCE VOLTAGE (VOLTS)
1
1
10
V
DS
, DRAIN−SOURCE VOLTAGE (VOLTS)
100
200
Figure 4. Capacitance versus Drain - Source Voltage
5
27
26
V
GS
= 3 V
3
2.75 V
2
2.5 V
1
2.25 V
0
0
20
40
60
80
100
120
DRAIN VOLTAGE (VOLTS)
21
1
2.63 V
G
ps
, POWER GAIN (dB)
25
Figure 5. DC Safe Operating Area
I
D
, DRAIN CURRENT (AMPS)
4
I
DQ
= 675 mA
563 mA
450 mA
24
337 mA
23
22
225 mA
V
DD
= 50 Vdc
f = 220 MHz
10
P
out
, OUTPUT POWER (WATTS) CW
100
200
Figure 6. DC Drain Current versus Drain Voltage
−10
IMD, THIRD ORDER INTERMODULATION
DISTORTION (dBc)
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
5
10
100
P
out
, OUTPUT POWER (WATTS) PEP
300
900 mA
48
22
563 mA
685 mA
I
DQ
= 225 mA
336 mA
450 mA
V
DD
= 50 Vdc, f1 = 220 MHz, f2 = 220.1 MHz
Two−Tone Measurements, 100 kHz Tone Spacing
P
out
, OUTPUT POWER (dBm)
56
58
Figure 7. CW Power Gain versus Output Power
P3dB = 52.61 dBm (182.39 W)
P1dB = 52.27 dBm (168.66 W)
Ideal
54
52
Actual
50
V
DD
= 50 Vdc, I
DQ
= 450 mA
f = 220 MHz
24
26
28
30
32
P
in
, INPUT POWER (dBm)
Figure 8. Third Order Intermodulation Distortion
versus Output Power
Figure 9. CW Output Power versus Input Power
MRF6V2150NR1 MRF6V2150NBR1
RF Device Data
Freescale Semiconductor
5
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