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VS-50WQ06FN-M3

Description
Schottky Diodes & Rectifiers Schottky - D-PAK-e3
CategoryDiscrete semiconductor    diode   
File Size140KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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VS-50WQ06FN-M3 Overview

Schottky Diodes & Rectifiers Schottky - D-PAK-e3

VS-50WQ06FN-M3 Parametric

Parameter NameAttribute value
MakerVishay
Parts packaging codeTO-252AA
package instructionR-PSSO-G2
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, HIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.54 V
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current320 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current5.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage60 V
surface mountYES
technologySCHOTTKY
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature40
Base Number Matches1
VS-50WQ06FN-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 5.5 A
Base
cathode
4, 2
FEATURES
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• Popular D-PAK outline
• Small foot print, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
D-PAK (TO-252AA)
1
Anode
3
Anode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
D-PAK (TO-252AA)
5.5 A
60 V
See Electrical table
35 mA at 125 °C
150 °C
Single die
7 mJ
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The VS-50WQ06FN-M3 surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and small foot prints on PC board. Typical applications
are in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
5 A
pk
, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
5.5
60
320
0.54
-40 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-50WQ06FN-M3
60
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 132 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated
load condition and with
rated V
RRM
applied
VALUES
5.5
320
105
7
0.8
mJ
A
A
UNITS
T
J
= 25 °C, I
AS
= 1.2 A, L = 10 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Revision: 22-Nov-16
Document Number: 93313
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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