2N7000_07 datasheet, PDF - EEWORLD Datasheet

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2N7000_07: Description200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92; Categorysemiconductor Discrete semiconductor; File Size604KB，14 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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2N7000_07 Overview

200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

2N7000_07 Parametric

Parameter Name	Attribute value
Number of terminals	3
Minimum breakdown voltage	60 V
Processing package description	TO-92, 3 PIN
state	DISCONTINUED
packaging shape	round
Package Size	cylindrical
Terminal form	THROUGH-hole
terminal coating	tin lead
Terminal location	BOTTOM
Packaging Materials	Plastic/Epoxy
structure	Single WITH BUILT-IN diode
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Channel type	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	Universal small signal
Maximum leakage current	0.2000 A
feedback capacitor	5 pF
Maximum drain on-resistance	5 ohm

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2N7000

2N7002

N-channel 60 V, 1.8

Ω,

0.35 A, SOT23-3L, TO-92

STripFET™ Power MOSFET

Features

Type

2N7000

2N7002

■

DSS

60 V

DS(on)

max

< 5

Ω(@10V)

0.35 A

< 5

Ω(@10V)

0.20 A

Low Q

Low threshold drive

SOT23-3L

TO-92

Application

■

Switching applications

Description

This Power MOSFET is the second generation of

STMicroelectronics unique “single feature size”

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a

remarkable manufacturing reproducibility.

Figure 1.

Internal schematic diagram

SOT23-3L

TO-92

Table 1.

Device summary

Marking

2N7000G

ST2N

Package

TO-92

SOT23-3L

Packaging

Bulk

Tape and reel

Order codes

2N7000

2N7002

November 2008

Rev 9

1/14

www.st.com

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