®
BUX98
BUX98A
HIGH POWER NPN SILICON TRANSISTORS
s
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPES
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
HIGH CURRENT CAPABILITY
FAST SWITCHING SPEED
APPLICATIONS
s
HIGH FREQUENCY AND EFFICENCY
CONVERTERS
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BUX98 and BUX98A are Silicon Multi-
Epitaxial Mesa NPN transistor in jedec TO-3
metal case, intended and industrial applications
from single and three-phase mains operation.
1
2
TO-3
(version R)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CER
V
CES
V
CEO
V
EBO
I
C
I
CM
I
CP
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Collector-Emitter Voltage (R
BE
=
≤
10
Ω)
Collector-Base Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Collector Peak Current non Rep. (tp < 20
µs)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Power Dissipation at T
case
<
25
o
C
Storage Temperature
Max Operating Junction Temperature
BUX98
850
850
400
7
30
60
80
8
30
250
-65 to 200
200
Value
BUX98A
1000
1000
450
Unit
V
V
V
V
A
A
A
A
A
W
o
C
o
C
September 2003
1/4
BUX98 / BUX98A
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case
Max
0.7
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CER
I
CES
I
CEO
I
EBO
Parameter
Collector Cut-off
Current (R
BE
= 10
Ω)
Collector Cut-off
Current (V
BE
= 0 )
Collector Cut-off
Current (I
B
= 0)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
V
CE
= V
CES
V
CE
= V
CES
V
CE
= V
CES
V
CE
= V
CES
V
CE
= V
CEO
V
EB
= 5 V
I
C
= 200 mA
for
BUX98
for
BUX98A
L = 2mH
for
BUX98
for
BUX98A
for
BUX98
I
C
= 20 A
for
BUX98A
I
C
= 16 A
I
C
= 24 A
for
BUX98
I
C
= 20 A
for
BUX98A
I
C
= 16 A
for
BUX98
V
CC
= 150 V
I
B1
= - I
B2
= 4 A
for
BUX98A
V
CC
= 150 V
I
B1
= - I
B2
= 3.2 A
I
C
= 16 A
I
C
= 20 A
I
C
= 1 A
850
1000
I
B
= 4 A
I
B
= 3.2 A
I
B
= 5 A
I
B
= 4 A
I
B
= 3.2 A
1.5
1.5
5
1.6
1.6
1
3
0.8
1
3
0.8
V
V
V
V
V
V
V
µs
µs
µs
µs
µs
µs
T
case
= 125 C
T
case
= 125 C
o
o
Min.
Typ.
Max.
1
8
400
4
2
2
Unit
µA
µA
µA
mA
mA
mA
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CER(sus)
∗
Collector-Emitter
Sustaining Voltage
V
CE(sat)
∗
Collector-Emitter
Saturation Voltage
400
450
V
V
V
BE(sat)
∗
Base-Emitter
Saturation Voltage
t
on
t
s
t
f
t
on
t
s
t
f
Turn-on Time
Storage Time
Fall Time
Turn-on Time
Storage Time
Fall Time
∗
Pulsed: Pulse duration = 300
µs,
duty cycle = 1.5 %
2/4
BUX98 / BUX98A
TO-3 (version R) MECHANICAL DATA
mm
MIN.
A
B
C
D
E
G
N
P
R
U
V
30.10
3.88
10.9
16.9
26.2
4.09
39.50
1.185
0.152
0.96
TYP.
11.7
1.10
1.70
8.7
20.0
0.429
0.665
1.031
0.161
1.555
0.037
MAX.
MIN.
inch
TYP.
0.460
0.043
0.066
0.342
0.787
MAX.
DIM.
P
G
A
D
C
U
V
O
N
R
B
P003N
3/4
E
BUX98 / BUX98A
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
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