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HIT8550-N-TZ-EQ

Description
700 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size108KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

HIT8550-N-TZ-EQ Overview

700 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

HIT8550-N-TZ-EQ Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresNOT FOR AUTOMOTIVE OR INDUSTRIAL USE
Maximum collector current (IC)0.7 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)45
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
HIT8550-N
Silicon PNP Epitaxial
REJ03G1610-0100
Rev.1.00
Nov 28, 2007
Features
Low frequency power amplifier
Complementary pair with HIT8050-N
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92 (1))
1. Emitter
2. Collector
3. Base
3
2
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note:
PW
10 ms, Duty cycle
20%
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C (peak) Note
P
C
Tj
Tstg
Ratings
–45
–25
–6
–0.7
–1
0.625
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
REJ03G1610-0100 Rev.1.00 Nov 28, 2007
Page 1 of 4

HIT8550-N-TZ-EQ Related Products

HIT8550-N-TZ-EQ HIT8550-N-EQ HIT8550-N
Description 700 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 700 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 700 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
Number of components 1 1 1
Number of terminals 3 3 3
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-hole
Terminal location BOTTOM BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER amplifier
Transistor component materials SILICON SILICON silicon
Is it lead-free? Lead free Lead free -
Is it Rohs certified? conform to conform to -
Maker Renesas Electronics Corporation Renesas Electronics Corporation -
Parts packaging code TO-92 TO-92 -
package instruction CYLINDRICAL, O-PBCY-T3 SC-43A, 3 PIN -
Contacts 3 3 -
Reach Compliance Code compli unknow -
ECCN code EAR99 EAR99 -
Other features NOT FOR AUTOMOTIVE OR INDUSTRIAL USE NOT FOR AUTOMOTIVE OR INDUSTRIAL USE -
Maximum collector current (IC) 0.7 A 0.7 A -
Collector-emitter maximum voltage 25 V 25 V -
Configuration SINGLE SINGLE -
Minimum DC current gain (hFE) 45 45 -
JEDEC-95 code TO-92 TO-92 -
JESD-30 code O-PBCY-T3 O-PBCY-T3 -
Humidity sensitivity level 1 1 -
Maximum operating temperature 150 °C 150 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape ROUND ROUND -
Package form CYLINDRICAL CYLINDRICAL -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type PNP PNP -
Maximum power dissipation(Abs) 0.625 W 0.625 W -
Certification status Not Qualified Not Qualified -
surface mount NO NO -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
Base Number Matches 1 1 -

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