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2SK1402

Description
Silicon N Channel MOS FET
CategoryDiscrete semiconductor    The transistor   
File Size75KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

2SK1402 Overview

Silicon N Channel MOS FET

2SK1402 Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
Parts packaging codeTO-220AB
package instructionTO-220AB, 3 PIN
Contacts3
Reach Compliance Codeunknown
Is SamacsysN
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)4 A
Maximum drain current (ID)4 A
Maximum drain-source on-resistance2.4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)50 W
Maximum pulsed drain current (IDM)16 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2SK1402, 2SK1402A
Silicon N Channel MOS FET
REJ03G0942-0200
(Previous: ADE-208-1282)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D
G
1. Gate
2. Drain
(Flange)
3. Source
S
1
2
3
Rev.2.00 Sep 07, 2005 page 1 of 6

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Maker Renesas Electronics Corporation - Renesas Electronics Corporation Renesas Electronics Corporation - - Renesas Electronics Corporation Renesas Electronics Corporation
Parts packaging code TO-220AB - TO-3PL TO-3PL - - TO-3PL TO-3PL
package instruction TO-220AB, 3 PIN - TO-3PL, 3 PIN FLANGE MOUNT, R-PSFM-T3 - - TO-3PL, 3 PIN FLANGE MOUNT, R-PSFM-T3
Contacts 3 - 3 3 - - 4 4
Reach Compliance Code unknown - unknown compliant - - compliant compliant
Is Samacsys N - N N - - N N
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 600 V - 450 V 500 V - - 450 V 500 V
Maximum drain current (Abs) (ID) 4 A - 30 A 30 A - - 30 A 30 A
Maximum drain current (ID) 4 A - 30 A 30 A - - 30 A 30 A
Maximum drain-source on-resistance 2.4 Ω - 0.25 Ω 0.27 Ω - - 0.25 Ω 0.27 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3 - - R-PSFM-T3 R-PSFM-T3
Number of components 1 - 1 1 - - 1 1
Number of terminals 3 - 3 3 - - 3 3
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE - - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C - 150 °C 150 °C - - 150 °C 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR - - RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT - - FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL - N-CHANNEL N-CHANNEL - - N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 50 W - 200 W 200 W - - 200 W 200 W
Maximum pulsed drain current (IDM) 16 A - 120 A 120 A - - 120 A 120 A
Certification status Not Qualified - Not Qualified Not Qualified - - Not Qualified Not Qualified
surface mount NO - NO NO - - NO NO
Terminal form THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE - - THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE - SINGLE SINGLE - - SINGLE SINGLE
transistor applications SWITCHING - SWITCHING SWITCHING - - SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON - - SILICON SILICON
Base Number Matches 1 - 1 1 - - 1 1
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