2SK1402, 2SK1402A
Silicon N Channel MOS FET
REJ03G0942-0200
(Previous: ADE-208-1282)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D
G
1. Gate
2. Drain
(Flange)
3. Source
S
1
2
3
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1402, 2SK1402A
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at T
C
= 25
°
C
2SK1402
2SK1402A
V
GSS
I
D
I
D(pulse)
*
I
DR
2
Pch*
Tch
Tstg
1
Symbol
V
DSS
Ratings
600
650
±30
4
16
4
50
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source
breakdown voltage
2SK1402
2SK1402A
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
600
650
±30
—
—
2.0
—
—
2.2
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
1.8
2.0
3.5
600
140
25
8
30
60
35
0.9
300
Max
—
—
—
±10
250
3.0
2.4
2.6
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 500 V, V
GS
= 0
V
DS
= 550 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
3
I
D
= 2 A, V
GS
= 10 V *
I
D
= 2 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 2 A, V
GS
= 10 V,
R
L
= 15
Ω
3
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain
current
2SK1402
2SK1402A
Gate to source cutoff voltage
Static drain to source on 2SK1402
state resistance
2SK1402A
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note: 3. Pulse test
I
F
= 4 A, V
GS
= 0
I
F
= 4 A, V
GS
= 0,
di
F
/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK1402, 2SK1402A
Main Characteristics
Power vs. Temperature Derating
60
Maximum Safe Operation Area
50
30
10
Channel Dissipation Pch (W)
Drain Current I
D
(A)
10
ar
ea
µ
s
10
0
O
is per
lim at
ite ion
d in
by th
R is
(o
n
40
PW
µ
s
)
3
1
0.3
0.1
0.05
DS
D
C
=
10
m
O
pe
1
s
m
ra
s
tio
(1
e)
ls
pu
ot
sh
n
20
(T
C
=
Ta = 25
°
C
25
°
C
)
2SK1402
2SK1402A
1
3
10
30
100
300 1,000
0
50
100
150
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
5
10 V
6V
5V
Pulse Test
5
Typical Transfer Characteristics
V
DS
= 20 V
Pulse Test
Drain Current I
D
(A)
3
4.5 V
Drain Current I
D
(A)
4
4
3
2
4V
V
GS
= 3.5 V
0
10
20
30
40
50
2
1
1
T
C
= –25°C
25°C
75°C
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Pulse Test
16
I
D
= 5 A
12
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
5
2
1
0.5
0.2
V
GS
= 10 V
15 V
Drain to Source Saturation Voltage V
DS (on)
(V)
8
2A
1A
0
4
8
12
16
20
4
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.5
1
2
5
10
20
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK1402, 2SK1402A
Static Drain to Source on State
Resistance vs. Temperature
10
V
GS
= 10 V
Pulse Test
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
10
V
DS
= 20 V
Pulse Test
5
2
1
0.5
T
C
= –25°C
25°C
75°C
8
6
I
D
= 5 A
2A
4
1A
2
0.2
0.1
0.05
0
–40
0
40
80
120
160
0.1
0.2
0.5
1
2
5
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
1,000
1,000
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Reverse Recovery Time trr (ns)
500
200
100
50
20
di/dt = 100 A/µs, V
GS
= 0
Ta = 25°C
0.2
0.5
1
2
5
Capacitance C (pF)
100
Coss
10
Crss
V
GS
= 0
f = 1 MHz
0
0
10
20
30
40
50
10
0.05 0.1
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
1,000
V
DD
= 100 V
250 V
400 V
20
500
Switching Characteristics
V
GS
= 10 V, PW .= 2
µs
duty
<
1%, V
DD
= 30 V
=
.
16
12
V
GS
Switching Time t (ns)
800
200
100
t
d (off)
50
t
f
20
t
r
10
5
0.1
t
d (on)
600
V
DS
I
D
= 4 A
200
V
DD
= 400 V
250 V
100 V
0
8
16
24
32
400
8
4
0
0
40
0.2
0.5
1
2
5
10
Gate Charge Qg (nc)
Reverse Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK1402, 2SK1402A
Reverse Drain Current vs.
Source to Drain Voltage
5
Reverse Drain Current I
DR
(A)
Pulse Test
4
3
2
1
5 V, 10 V
0
0.4
0.8
V
GS
= 0, –5 V
1.2
1.6
2.0
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance
γ
S
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
0.5
0.3
0.2
θch–c
(t) =
γ
S
(t)
• θch–c
θch–c
= 2.50°C/W, T
C
= 25°C
P
DM
lse
Pu
1.0
T
C
= 25°C
0.1
0.1
0.05
0.02
0.03
0.01
10
µ
1
0.0
t
ho
1S
T
1m
10 m
100 m
PW
D = PW
T
100
µ
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Vout Monitor
D.U.T.
R
L
Vout
Vin
10 V
50
Ω
V
DD
= 30 V
t
d (on)
Vin
10%
10%
Waveforms
90%
10%
90%
t
d (off)
t
f
90%
t
r
Rev.2.00 Sep 07, 2005 page 5 of 6
Embedded System
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