2SK1623(L), 2SK1623(S)
Silicon N Channel MOS FET
REJ03G0958-0300
(Previous: ADE-208-1299)
Rev.3.00
Jan 10, 2006
Application
High speed power switching
Features
•
Low on-resistance
•
High speed switching
•
4 V gate drive device
Can be driven from 5 V source
•
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
4
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
4
G
1
2
D
1. Gate
2. Drain
3. Source
4. Drain
3
S
1
2
3
Rev.3.00 Jan 10, 2006 page 1 of 7
2SK1623(L), 2SK1623(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at T
C
= 25
°
C
Symbol
V
(BR)DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Tch
*1
Ratings
100
±20
20
80
20
50
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
*2
Tstg
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note:
3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|yfs|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
100
±20
—
—
1.0
—
—
10
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.065
0.085
16
1300
540
160
12
100
300
150
1.3
300
Max
—
—
±10
250
2.0
0.085
0.12
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= 20 A, V
GS
= 0
I
F
= 20 A, V
GS
= 0,
di
F
/dt = 50 A/µs
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±16
V, V
DS
= 0
V
DS
= 80 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 10 A, V
GS
= 10 V *
3
I
D
= 10 A, V
GS
= 4 V *
I
D
= 10 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 10 A, V
GS
= 10 V,
R
L
= 3
Ω
3
3
Rev.3.00 Jan 10, 2006 page 2 of 7
2SK1623(L), 2SK1623(S)
Main Characteristics
Power vs. Temperature Derating
60
100
10
µ
s
Maximum Safe Operation Area
Channel Dissipation Pch (W)
10
0
30
µ
s
1
Drain Current I
D
(A)
PW
=
m
s
40
10
3
1
0.3
D
10
C
m
O
s
pe
(1
Sh
ot
ra
tio
n
)
(T
c
20
=
5°
Operation in
C
)
this area is
limited by R
DS (on)
2
Ta = 25°C
0
0
50
100
150
0.1
1
3
10
30
100
300
1000
Case Temperature
Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
10 V
7V
5V
Pulse Test
4V
20
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
40
16
30
3.5 V
12
20
3V
10
V
GS
= 2.5 V
8
Tc = 75°C
25°C
–25°C
0
1
2
3
4
5
4
0
0
4
8
12
16
20
0
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
2.0
1.6
I
D
= 20 A
1.2
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current
0.5
Pulse Test
0.2
0.1
0.05
V
GS
= 4 V
10 V
0.8
10 A
5A
0.02
0.01
0.005
2
5
10
20
50 100
200
0.4
0
0
2
4
6
8
10
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.3.00 Jan 10, 2006 page 3 of 7
2SK1623(L), 2SK1623(S)
Static Drain to Source on State Resistance
vs. Temperature
0.20
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance
y
fs
(S)
50
Tc = –25°C
25°C
Pulse Test
0.16
20
10
5
I
D
= 20 A 10 A
5A
0.12
V
GS
= 4 V
0.08
5 A, 10 A
20 A
10 V
2
1
0.5
0.2
75°C
0.04
0
–40
V
DS
= 10 V
Pulse Test
0.5
1
2
5
10
20
0
40
80
120
160
Case Temperature
Tc
(°C)
Drain Current I
D
(A)
Body to Drain Diode Reverse
Recovery Time
1000
10000
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Ciss
1000
Coss
Reverse Recovery Time trr (ns)
500
200
100
50
di / dt = 50 A /
µs
V
GS
= 0, Ta = 25°C
Pulse Test
1
2
5
10
20
50
Capacitance C (pF)
100
Crss
20
10
0.5
10
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
100
Switching Characteristics
20
1000
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
I
D
= 20 A
V
DD
= 25 V
50 V
80 V
V
GS
V
DS
60
Switching Time t (ns)
80
16
500
td(off)
12
200
100
50
tf
tr
V
GS
= 10 V, V
DD
= 30 V
PW = 2
µs,
duty
≤
1 %
td(on)
1
2
5
10
20
50
40
8
20
V
DD
= 80 V
50 V
25 V
0
20
40
60
80
4
20
10
0.5
0
0
100
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.3.00 Jan 10, 2006 page 4 of 7
2SK1623(L), 2SK1623(S)
Reverse Drain Current vs.
Source to Drain Voltage
20
Reverse Drain Current I
DR
(A)
Pulse Test
16
10 V
5V
12
8
4
V
GS
=
0, –5
V
0
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage
V
SD
(V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
θch
– c (t) =
γ
s (t) •
θch
– c
θch
– c = 2.5°C/W, Tc = 25°C
P
DM
D=
PW
T
1m
10 m
100 m
1
10
PW
T
0.0
2
1
0.03
0.0
1
o
sh
u
tp
lse
0.01
10
µ
100
µ
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
Vout
Vin
10 V
50
Ω
V
DD
= 30 V
td(on)
10%
Vout
Monitor
Vin
10%
Waveform
90%
10%
90%
tr
90%
td(off)
tf
Rev.3.00 Jan 10, 2006 page 5 of 7
stm32/stm8
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