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2SK1579

Description
Silicon N Channel MOS FET
CategoryDiscrete semiconductor    The transistor   
File Size63KB,6 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

2SK1579 Overview

Silicon N Channel MOS FET

2SK1579 Parametric

Parameter NameAttribute value
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSingle
Maximum drain current (Abs) (ID)2 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1 W
surface mountYES
Base Number Matches1
2SK1579
Silicon N Channel MOS FET
REJ03G0956-0200
(Previous: ADE-208-1296)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
Low on-resistance
High speed switching
Suitable for low voltage operation
Outline
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK
R
)
3
2 1
4
G
D
1. Gate
2. Drain
3. Source
4. Drain
S
Note:
Marking is “DY”.
*UPAK is a trademark of Renesas Technology Corp.
Rev.2.00 Sep 07, 2005 page 1 of 5

2SK1579 Related Products

2SK1579 2SK1579DY
Description Silicon N Channel MOS FET Silicon N Channel MOS FET
Contacts 3 3
Reach Compliance Code compli unknow
ECCN code EAR99 EAR99
Configuration Single SINGLE WITH BUILT-IN DIODE AND RESISTOR
Maximum drain current (Abs) (ID) 2 A 2 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 1 W 1 W
surface mount YES YES
Base Number Matches 1 1

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