MJE18604D2BV datasheet, PDF - EEWORLD Datasheet

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MJE18604D2BV: Description3A, 800V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size387KB，61 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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MJE18604D2BV Overview

3A, 800V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

MJE18604D2BV Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	TO-220AB
package instruction	PLASTIC, TO-220AB, 3 PIN
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	BUILT-IN ANTISATURATION NETWORK
Shell connection	COLLECTOR
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	800 V
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	20
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	13 MHz
Base Number Matches	1

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MJE18604D2

Advance Information

High Speed, High Gain Bipolar

NPN Power Transistor with

Integrated Collector-Emitter

Diode and Built-in Efficient

Antisaturation Network for

1600 V Applications

The MJE18604D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).

Tight dynamic characteristics and lot to lot low spread (±150 ns on storage time) make

it ideally suitable for light ballast applications. Therefore, there is no more a need to

guarantee an hfe window.

Main features:

•

Low Base Drive Requirement

•

High DC Current Gain (30 Typical) @ IC = 400 mA

•

Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active

Antisaturation (H2BIP) Structure which Minimizes the Spread

•

Integrated Collector–Emitter Free Wheeling Diode Matched with the Power

Transistor

•

Fully Characterized and Guaranteed Dynamic VCE(sat)

•

“6 Sigma” Process Providing Tight and Reproductible Parameter Spreads

POWER TRANSISTORS

3 AMPERES

1600 VOLTS

100 WATTS

CASE 221A–06

TO–220AB

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