2SK1667
Silicon N Channel MOS FET
REJ03G0964-0200
(Previous: ADE-208-1308)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D
G
1. Gate
2. Drain
(Flange)
3. Source
S
1
2
3
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1667
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at T
C
= 25
°
C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Tch
*1
Ratings
250
±30
7
28
7
50
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
*2
Tstg
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note: 1. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
250
±30
—
—
2.0
—
3.0
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.4
5.0
690
265
45
13
55
65
37
1.0
180
Max
—
—
±10
250
3.0
0.55
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 200 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 4 A, V
GS
= 10 V *
I
D
= 4 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 4 A, V
GS
= 10 V,
R
L
= 7.5
Ω
3
3
I
F
= 7 A, V
GS
= 0
I
F
= 7 A, V
GS
= 0,
di
F
/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK1667
Main Characteristics
Power vs. Temperature Derating
80
100
Operation in this area
is limited by R
DS(on)
10
0
Maximum Safe Operation Area
Pch (W)
I
D
(A)
30
10
3
1
0.3
0.1
10
µ
s
60
µ
s
Channel Dissipation
1
D
C
PW
40
Drain Current
m
s
O
=
pe
ra
t
10
m
io
s
n
20
(T
(1
c
=
sh
ot
25
)
Ta = 25°C
1
3
10
30
°
C
)
0
50
100
150
200
100 300
1000
Case Temperature
Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
10
10 V
5.5 V
Pulse Test
5V
6
6V
10
Typical Transfer Characteristics
Drain Current I
D
(A)
Drain Current I
D
(A)
8
8
6
V
DS
= 10 V
Pulse Test
4
4.5 V
4
Tc = 75°C
2
25°C
– 25°C
2
V
GS
= 4 V
0
1
4
8
12
16
20
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
5
Pulse Test
V
GS
= 10 V
Drain to Source Saturation Voltage V
DS(on)
(V)
Static Drain to Source On State Resistance
R
DS (on)
(Ω)
2
1
0.5
6
I
D
= 10 A
4
5A
2A
0
4
8
12
16
20
15 V
0.2
0.1
0.05
0.2
0.5
1
2
5
10
20
2
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK1667
Static Drain to Source on State Resistance
vs. Temperature
2.0
Pulse Test
V
GS
= 10 V
I
D
= 10 A
5A
0.8
2A
Static Drain to Source On State Resistance
R
DS(on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance |yfs| (S)
50
Pulse Test
V
DS
= 10 V
1.6
20
10
5
2
1
0.5
0.1
–25°C
25°C
Tc = 75°C
1.2
0.4
0
– 40
0
40
80
120
160
0.2
0.5
1
2
5
10
Case Temperature Tc (°C)
Drain Current I
D
(A)
Typical Capacitance vs. Drain
Source Voltage
1000
Ciss
Body to Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time trr (ns)
Capacitance C (pF)
200
100
50
di / dt = 100 A /
µs
V
GS
= 0, Ta = 25°C
Coss
100
20
10
5
0.2
10
V
GS
= 0
f = 1 MHz
1
Crss
0.5
1
2
5
10
20
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
500
20
500
Switching Characteristics
Gate to Source Voltage V
GS
(V)
V
GS
= 10 V, V
DD
=
•
30 V
PW = 2
µs,
duty
≤
1 %
td (off)
•
Drain to Source Voltage V
DS
(V)
V
GS
300
V
DS
200 V
100 V
V
DD
= 50 V
V
DD
= 200 V
100 V
50 V
0
8
16
24
32
40
8
12
Switching Time t (ns)
400
I
D
= 7 A
16
200
100
50
200
tf
20
10
5
0.1
tr
td (on)
100
4
0
0.2
0.5
1
2
5
10
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK1667
Reverse Drain Current vs. Source
to Drain Voltage
10
Reverse Drain Current I
DR
(A)
8
Pulse Test
6
4
V
GS
= 10 V
2
V
GS
= 0, – 5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V
SD
(V)
γ
s
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
0.5
0.3
0.2
0.1
0.1
0.05
0.02
0.03
0.01
10
µ
0.01
1 shot Pulse
100
µ
1m
10 m
100 m
θ
ch – c(t) =
γ
s(t)
. θ
ch – c
θ
ch – c = 2.5°C / W, Tc = 25°C
PW
D= T
P
DM
T
PW
Tc = 25°C
Normalized Transient Thermal Impedance
1.0
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Vout Monitor
D.U.T
R
L
Vin
10 V
50
Ω
Vin
V out
10 %
Waveforms
90 %
10 %
10 %
.
.
V
DD
=
30 V
td (on)
90 %
tr
90 %
td (off)
tf
Rev.2.00 Sep 07, 2005 page 5 of 6
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