2SK1669
Silicon N Channel MOS FET
REJ03G0966-0200
(Previous: ADE-208-1310)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
Built-in fast recovery diode (t
rr
= 90 ns)
Suitable for motor control, switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
G
1. Gate
2. Drain
(Flange)
3. Source
S
3
1
2
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1669
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at T
C
= 25
°
C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Tch
*1
Ratings
250
±30
30
120
30
125
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
*2
Tstg
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note: 3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
250
±30
—
—
2.0
—
12
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.075
20
3100
1330
190
45
170
270
150
1.0
90
Max
—
—
±10
250
3.0
0.095
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 200 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 15 A, V
GS
= 10 V *
I
D
= 15 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 15 A, V
GS
= 10 V,
R
L
= 2
Ω
3
3
I
F
= 30 A, V
GS
= 0
I
F
= 30 A, V
GS
= 0,
di
F
/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK1669
Main Characteristics
Power vs. Temperature Derating
150
1,000
300
ea
ar
is
on)
h
n t
S(
n i y R
D
tio b
ra d
pe mite
O li
PW
is
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
100
30
10
3
1
0.3
0.1
100
10
=
10
0
µ
µ
s
1
DC
50
10
Op
ms
er
(1
ati
Sh
on
ot)
(T
C
=
25
°
C
)
ms
s
Ta = 25°C
1
3
10
30
300
1,000
0
50
100
150
100
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
10 V
8V
6V
5V
30
4.5 V
Pulse Test
50
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
Drain Current ID (A)
40
40
30
20
20
10
V
GS
= 4 V
10
T
C
= 75°C
25°C
–25°C
0
4
8
12
16
20
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
4
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
Pulse Test
Drain to Source Saturation Voltage V
DS (on)
(V)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.2
0.1
0.05
V
GS
= 10 V, 15 V
3
2
I
D
= 20 A
10 A
5A
4
8
12
16
20
0.02
0.01
0.005
1
2
5
10
20
50
100
1
0
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK1669
Static Drain to Source on State
Resistance vs. Temperature
0.2
V
GS
= 10 V
Pulse Test
0.16
I
D
= 30 A
20 A
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
50
V
DS
= 10 V
Pulse Test
20
25°C
10
5
75°C
Ta = –25°C
0.12
10 A
0.08
2
1
0.5
0.5
0.04
0
–40
0
40
80
120
160
1
2
5
10
20
50
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
500
10,000
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
Reverse Recovery Time trr (ns)
Ciss
200
Capacitance C (pF)
100
50
di/dt = 100 A/µs, V
GS
= 0
Ta = 25°C, Pulse Test
1,000
Coss
20
10
5
0.5
100
Crss
V
GS
= 0
f = 1 MHz
10
1
2
5
10
20
50
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
500
V
GS
= 50 V
100 V
200 V
V
GS
V
DS
20
500
Switching Characteristics
t
d (off)
Switching Time t (ns)
400
16
200
t
f
100
50
t
r
t
d (on)
300
12
200
8
20
10
5
0.5
100
V
DD
= 200 V
100 V
50 V
40
80
120
I
D
= 30 A
Pulse Test
160
200
4
.
V
GS
= 10 V, V
DD
= 30 V
.
PW = 2
µs,
duty < 1%
0
0
1
2
5
10
20
50
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK1669
Reverse Drain Current vs.
Source to Drain Voltage
50
Reverse Drain Current I
DR
(A)
Pulse Test
40
30
20
V
GS
= 10 V
10
0, –5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance
γ
S
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0
D=1
0.5
0.3
0.1
0.2
0.1
0.05
0.02
0.03
0.01
10
µ
0.01
Pulse
hot
1S
T
C
= 25°C
θch–c
(t) =
γ
S
(t)
• θch–c
θch–c
= 1.0°C/W, T
C
= 25°C
P
DM
PW
1
D = PW
T
T
1m
10 m
100 m
100
µ
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Vout Monitor
D.U.T
R
L
50
Ω
Vin
10 V
Vout
V
DD
.
= 30 V
.
t
d (on)
Vin
10%
Waveforms
90%
10%
10%
90%
t
d (off)
t
f
90%
t
r
Rev.2.00 Sep 07, 2005 page 5 of 6
京公网安备 11010802033920号
EEWORLD
