2SK1773
Silicon N Channel MOS FET
REJ03G0972-0200
(Previous: ADE-208-1319)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
G
1. Gate
2. Drain
(Flange)
3. Source
S
3
1
2
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1773
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1 %
2. Value at Tc = 25
°
C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Tch
*1
Ratings
1000
±30
5
15
5
100
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
*2
Tstg
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note: 3. Pulse Test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
1000
±30
—
—
2.0
—
3.2
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
1.5
5.0
1700
700
315
25
110
210
135
0.85
1050
Max
—
—
±10
250
3.0
2.0
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 800 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 3 A, V
GS
= 10 V*
I
D
= 3 A, V
DS
= 20 V*
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 3 A, V
GS
= 10 V,
R
L
= 10
Ω
3
3
I
F
= 5 A, V
GS
= 0
I
F
= 5 A, V
GS
= 0,
di
F
/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK1773
Main Characteristics
Power vs. Temperature Derating
160
50
30
Maximum Safe Operation Area
Operation in this area
is limited by R
DS(on)
10
Channel Dissipation Pch (W)
Drain Current I
D
(A)
120
10
PW
10
D
C
µ
s
0
µ
s
)
)
ot
s
°
C
sh
m
25
1
(1
=
s
c
m
(T
10
n
=
tio
ra
pe
O
3
1
0.3
0.1
80
40
Ta = 25°C
0
50
100
150
200
0.05
10
30
100
300
1000 3000 10000
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
10
10 V
8V
5.5 V
Pulse Test
5V
5
Typical Transfer Characteristics
Drain Current I
D
(A)
6
Drain Current I
D
(A)
8
4
V
DS
= 10 V
Pulse Test
3
4
4V
2
V
GS
= 3.5 V
0
10
20
30
40
50
2
Tc = 75°C
25°C
1
–25°C
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
20
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
16
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
20
10
5
12
5A
8
2
1
0.5
0.2
V
GS
= 10 V
4
2A
I
D
= 1 A
0
4
8
12
16
20
0.5
1
2
5
10
20
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK1773
Static Drain to Source on State
Resistance vs. Temperature
10
Pulse Test
V
GS
= 10 V
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
10
5
Tc = – 25°C
25°C
75°C
8
6
I
D
= 5 A
2
1
0.5
4
2
2A
1A
160
0.2
0.1
0.05
V
DS
= 10 V
Pulse Test
0.1
0.2
0.5
1
2
5
0
–40
0
40
80
120
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
5000
10000
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
Reverse Recovery Time trr (ns)
Capacitance C (pF)
2000
1000
500
di / dt = 100 A /
µs
V
GS
= 0, Ta =25°C
Ciss
1000
Coss
100
Crss
V
GS
= 0
f = 1 MHz
10
200
100
50
0.1
0.2
0.5
1
2
5
10
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
1000
20
500
Switching Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
t
d (off)
V
GS
V
DS
V
DD
= 250 V
400 V
I
D
= 5 A
12
Switching Time t (ns)
800
16
200
tf
100
tr
50
td (on)
20
10
5
0.1
.
V
GS
= 10 V, V
DD
= 30 V
.
PW = 2
µs,
duty
≤
1%
600
400
600 V
V
DD
= 600 V
400 V
250 V
8
200
4
0
200
0
40
80
120
160
0.2
0.5
1
2
5
10
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK1773
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
8
10
Reverse Drain Current I
DR
(A)
6
4
V
GS
= 10 V
2
0, – 5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance
γ
S
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
0.5
0.3
0.2
0.1
0.1
0.05
0.02
0.03
0.01
10
µ
1
tP
sho
ul se
Tc = 25°C
1.0
θ
ch – c(t) =
γ
s(t)
. θ
ch – c
θ
ch – c = 1.25°C / W, Tc = 25°C
PW
D= T
P
DM
T
1m
10 m
100 m
PW
0.01
100
µ
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Vout Monitor
D.U.T
Vout
R
L
Vin
10 V
50
Ω
V
DD
Vin
10 %
Waveforms
90 %
10 %
10 %
90 %
.
=
30 V
.
td (on)
tr
90 %
td (off)
tf
Rev.2.00 Sep 07, 2005 page 5 of 6
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