2SK1573
Silicon N Channel MOS FET
REJ03G0955-0200
(Previous: ADE-208-1295)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
G
1. Gate
2. Drain
(Flange)
3. Source
S
3
1
2
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1573
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at T
C
= 25
°
C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Tch
*1
Ratings
600
±30
15
60
15
125
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
*2
Tstg
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note: 3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
600
±30
—
—
2.0
—
9
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.35
14
3150
700
90
35
105
250
90
1.0
680
Max
—
—
±10
250
3.0
0.50
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 500 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 8 A, V
GS
= 10 V *
I
D
= 8 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 8 A, V
GS
= 10 V,
R
L
= 3.75
Ω
3
3
I
F
= 15 A, V
GS
= 0
I
F
= 15 A, V
GS
= 0,
di
F
/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK1573
Main Characteristics
Power vs. Temperature Derating
150
100
10
sa
re
a
Maximum Safe Operation Area
Channel Dissipation Pch (W)
n)
Drain Current I
D
(A)
O
is per
lim at
ite ion
d in
by th
R i
30
100
10
3
1
0.3
PW
10
0
=
µ
s
10
µ
s
DS
(o
1
m
s
s
(1
m
C
D
O
ra
pe
n
tio
Sh
ot
Pu
50
lse
)
=
(T
C
25
°
C
)
Ta = 25°C
0.1
0
50
100
150
1
3
10
30
100
300 1,000
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Transfer Characteristics
20
10 V
8V
5V
20
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
Pulse Test
12
4.5 V
Drain Current I
D
(A)
16
16
12
8
8
Ta = 75
°
C
25
°
C
–25
°
C
4
V
GS
= 4 V
4
0
4
8
12
16
20
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
I
D
= 20 A
Drain to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1
0.5
V
GS
= 10, 15 V
Drain to Source Saturation Voltage V
DS (on)
(V)
6
4
10 A
5A
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.2
0.1
0.05
1
2
5
10
20
50
100
2
0
2
4
6
8
10
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK1573
Static Drain to Source on State
Resistance vs. Temperature
2.0
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
Pulse Test
V
GS
= 10 V
50
V
DS
= 10 V
Pulse Test
20
10
5
T
C
= –25°C
25°C
75°C
1.6
1.2
I
D
= 20 A
10 A
0.8
2
1
0.5
0.2
0.4
5A
0
–40
0
40
80
120
160
0.5
1
2
5
10
20
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
5,000
10,000
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
Reverse Recovery Time trr (ns)
Ciss
Capacitance C (pF)
2,000
1,000
500
1,000
Coss
200
100
50
0.5
100
Crss
di/dt = 100 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
1
2
5
10
20
50
10
0
V
GS
= 0
f = 1 MHz
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
1,000
20
Switching Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
500
t
d (off)
Switching Time t (ns)
800
V
DD
= 100 V
250 V
400 V
V
GS
16
200
t
r
100
50
t
f
t
d (on)
600
V
DS
12
400
I
D
= 15 A
8
20
10
5
0.5
V
GS
= 10 V, PW = 2
µs
duty < 1% V
DD
= 30 V
•
•
200
V
DD
= 400 V
250 V
100 V
40
80
120
160
200
4
0
0
1
2
5
10
20
50
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK1573
Reverse Drain Current vs.
Source to Drain Voltage
20
Reverse Drain Current I
DR
(A)
Pulse Test
16
12
8
V
GS
= 10 V
0, –5 V
0
0.4
0.8
1.2
1.6
2.0
4
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance
γ
S
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
0.5
0.3
0.1
0.2
0.1
0.05
θch–c
(t) =
γ
S
(t)
• θch–c
θch–c
= 1.0°C/W, T
C
= 25°C
P
DM
PW
1
D = PW
T
1.0
0.02
0.03
0.01
1S
0.01
10
µ
ho
lse
t Pu
100
µ
1m
10 m
100 m
T
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Vout Monitor
D.U.T
R
L
50
Ω
Vin
10 V
V
DD
.
= 30 V
.
Vin
Vout
10%
10%
Waveforms
90%
10%
90%
t
d (off)
t
d (on)
90%
t
r
t
f
Rev.2.00 Sep 07, 2005 page 5 of 6
Embedded System
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