2SK1947
Silicon N Channel MOS FET
REJ03G0986-0200
(Previous: ADE-208-1334)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
Built-in fast recovery diode (t
rr
= 140 ns)
Suitable for switching regulator, motor control
Outline
RENESAS Package code: PRSS0004ZF-A
(Package name: TO-3PL)
D
G
1. Gate
2. Drain
(Flange)
3. Source
S
2
3
1
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1947
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1 %
2. Value at Tc = 25
°
C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
Pch*
Tch
2
1
Ratings
250
±30
50
200
50
200
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
Tstg
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note: 3. Pulse Test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
250
±30
—
—
2.0
—
20
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.047
30
5810
2360
270
75
270
420
200
1.2
140
Max
—
—
±10
250
3.0
0.06
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 200 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 25 A, V
GS
= 10 V*
I
D
= 25 A, V
DS
= 10 V*
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 25 A, V
GS
= 10 V,
R
L
= 1.2
Ω
3
3
I
F
= 50 A, V
GS
= 0
I
F
= 50 A, V
GS
= 0,
di
F
/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK1947
Main Characteristics
Power vs. Temperature Derating
300
1000
300
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
100
30
10
3
1
0.3
0.1
200
100
10
10
µ
s
0
µ
DC
PW
s
1m
Op
=
s
era
10
ms
tio
n(
Tc
(1
Operation in this
= 2
sho
5 C
t)
area is limited
)
by R
DS
(on)
Ta = 25°C
1
3
10
30
100 300
1000
0
50
100
150
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
100
10 V
8V
80
60
40
20
6V
50
40
30
20
10
Typical Transfer Characteristics
Drain Current I
D
(A)
5.5 V
5V
4V
V
GS
= 3.5 V
4
8
12
16
20
Drain Current I
D
(A)
V
DS
= 10 V
Pulse Test
Tc = 25°C
75°C
–25°C
0
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
Pulse Test
0.2
0.1
0.05
0.02
0.01
V
GS
= 10 V
Drain to Source Saturation Voltage
V
DS (on)
(V)
5
Pulse Test
4
3
50 A
2
1
20 A
I
D
= 10 A
0
4
8
12
16
20
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.005
2
5
10
20
50
100 200
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK1947
Static Drain to Source on State
Resistance vs. Temperature
0.20
0.16
0.12
I
D
= 50 A
0.08
10 A, 20 A
0.04
0
–40
Pulse Test
V
GS
= 10 V
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
100
50
20
–25°C
10
5
2
1
0.5
75°C
Pulse Test
V
DS
= 10 V
Tc = 25°C
0
40
80
120
160
1
2
5
10
20
50
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
500
10000
di/dt = 100 A/
µ
s
V
GS
= 0, Ta = 25°C
Drain Current I
D
(A)
Typical Capacitance
vs. Drain to Source Voltage
Ciss
Reverse Recovery Time trr (ns)
Capacitance C (pF)
200
100
50
20
10
5
1
1000
Coss
100
V
GS
= 0
f = 1 MHz
10
Crss
2
5
10
20
50
100
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
500
400
300
V
DS
200
100
V
DD
= 200 V
100 V
50 V
80
160
240
320
8
4
0
400
V
DD
= 200 V
100 V
50 V
V
GS
16
12
20
1000
Switching Characteristics
Switching Time t (ns)
500
200
100
50
20
tf
td(off)
tr
I
D
= 50 A
td(on)
V
GS
= 10 V, V
DD
= 30 V
PW = 2
µs,
duty
≤
1 %
0
10
0.5
1
2
5
10
20
50
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK1947
Reverse Drain Current vs.
Source to Drain Voltage
50
Reverse Drain Current I
DR
(A)
Pulse Test
40
30
20
10
V
GS
= 10 V
0, –5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance
γ
S
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
0.5
0.3
0.2
0.1
1
T
C
= 25°C
0.1
0.05
0.02
0.01
ot P
1 Sh
ulse
θch–c
(t) =
γ
S
(t) ·
θch–c
θch–c
= 0.625°C/W, T
C
= 25°C
P
DM
PW
D = PW
T
0.03
T
1m
10 m
100 m
0.01
10
µ
100
µ
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Vout Monitor
D.U.T.
R
L
Vin
10 V
50
Ω
.
V
DD
= 30 V
.
t
d (on)
Vin
Vout
10%
10%
Waveforms
90%
10%
90%
t
d (off)
t
f
90%
t
r
Rev.2.00 Sep 07, 2005 page 5 of 6
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