2SK2084(L), 2SK2084(S)
Silicon N Channel MOS FET
REJ03G0995-0200
(Previous: ADE-208-1342)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for switching regulator, DC - DC converter
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK(L)-(2))
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
4
G
1
2
3
D
1. Gate
2. Drain
3. Source
4. Drain
1
2 3
S
Rev.2.00 Sep 07, 2005 page 1 of 7
2SK2084(L), 2SK2084(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤10 µs,
duty cycle
≤
1 %
2. Value at Tc = 25
°
C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
Tch
Tstg
Ratings
20
±20
7
28
7
20
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note: 3. Pulse Test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
20
±20
—
—
1.0
—
—
5
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.04
0.058
9
800
680
165
15
60
100
80
0.9
80
Max
—
—
±10
100
2.5
0.053
0.075
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±16
V, V
DS
= 0
V
DS
= 16 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 4 A, V
GS
= 10 V*
3
I
D
= 4 A, V
GS
= 4 V*
3
I
D
= 4 A, V
DS
= 10 V*
3
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 4 A, V
GS
= 10 V,
R
L
= 5
Ω
I
F
= 7 A, V
GS
= 0
I
F
= 7 A, V
GS
= 0,
di
F
/ dt = 20 A /
µs
Rev.2.00 Sep 07, 2005 page 2 of 7
2SK2084(L), 2SK2084(S)
Main Characteristics
Power vs. Temperature Derating
40
50
30
Maximum Safe Operation Area
10
µ
s
Channel Dissipation Pch (W)
Drain Current I
D
(A)
30
10
3
1
20
1
m
s
10
ms
D
(1
(T C O
sh
c = pe
ot)
Operation in
25 rati
this area is
°
C on
limited by R
DS(on)
)
=
PW
100
µs
10
0.3
Ta = 25°C
0
50
100
150
200
0.1
0.3
1
3
10
30
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
20
10 V
6V
4V
Pulse Test
20
Typical Transfer Characteristics
Drain Current I
D
(A)
3.5 V
12
Drain Current I
D
(A)
16
16
V
DS
= 10 V
Pulse Test
12
8
3V
4
V
GS
= 2.5 V
8
Tc = 75°C
25°C
–25°C
1
2
3
4
5
4
0
2
4
6
8
10
0
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
0.5
Pulse Test
0.4
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
0.2
Pulse Test
0.1
V
GS
= 4 V
0.3
I
D
= 5 A
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.05
10 V
0.2
2A
1A
0
2
4
6
8
10
0.1
0.02
0.01
0.1 0.2
0.5
1
2
5
10
20
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 7
2SK2084(L), 2SK2084(S)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
y
fs
(S)
0.20
Pulse Test
0.16
20
10
5
Tc = –25°C
25°C
75°C
V
DS
= 10 V
Pulse Test
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
0.12
V
GS
= 4 V
5A
1A
2A
1A
2A
5A
80
120
160
0.08
2
1
0.5
0.1
0.04
10 V
0
–40
0
40
0.2
0.5
1
2
5
10
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
200
10000
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
Reverse Recovery Time trr (ns)
100
Capacitance C (pF)
1000
Ciss
Coss
50
di / dt = 20 A /
µs
V
GS
= 0, Ta = 25°C
100
Crss
V
GS
= 0
f = 1 MHz
20
10
0.1
10
0.2
0.5
1
2
5
10
0
4
8
12
16
20
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
50
20
200
Switching Characteristics
td(off)
V
DD
= 20 V
10 V
5V
Switching Time t (ns)
40
V
GS
16
100
tf
V
GS
= 10 V
V
DD
= 20 V
PW = 5
µs
duty < 1 %
tr
td(on)
30
V
DS
12
50
20
8
10
V
DD
= 20 V
10 V
5V
4
0
40
20
0
8
16
24
32
10
0.1
0.2
0.5
1
2
5
10
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 7
2SK2084(L), 2SK2084(S)
Reverse Drain Current vs.
Source to Drain Voltage
20
Reverse Drain Current I
DR
(A)
Pulse Test
16
10 V
5V
12
V
GS
= 0, –5 V
8
4
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
S
(t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.05
0.02
1
0.0
0.1
θch
– c(t) =
γs
(t) •
θch
– c
θch
– c = 6.25°C/W, Tc = 25°C
u
tP
lse
PDM
PW
T
D=
0.03
1s
ho
PW
T
0.01
10 µ
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
RL
V
DD
= 20 V
90%
td(on)
90%
td(off)
tf
Vin
Vout
Vin
10 V
50
Ω
Vout
Monitor
10%
10%
10%
Waveforms
90%
tr
Rev.2.00 Sep 07, 2005 page 5 of 7
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