2SK2202-E datasheet, PDF - EEWORLD Datasheet

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2SK2202-E: DescriptionSilicon N Channel MOS FET; CategoryDiscrete semiconductor The transistor; File Size73KB，7 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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2SK2202-E Overview

Silicon N Channel MOS FET

2SK2202-E Parametric

Parameter Name	Attribute value
Brand Name	Renesas
Is it Rohs certified?	conform to
Parts packaging code	TO-220FM
package instruction	SC-67, TO-220FM, 3 PIN
Contacts	3
Manufacturer packaging code	PRSS0003AD-A3
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	120 V
Maximum drain current (Abs) (ID)	7 A
Maximum drain current (ID)	7 A
Maximum drain-source on-resistance	0.55 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e2
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	20 W
Maximum pulsed drain current (IDM)	14 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN COPPER
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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2SK2202

Silicon N Channel MOS FET

REJ03G1002-0300

(Previous: ADE-208-139)

Rev.3.00

Sep 07, 2005

Application

High speed power switching

Features

•

Low on-resistance

High speed switching

Low drive current

4 V gate drive device can be driven from 5 V source

Suitable for switching regulator, DC-DC converter

Outline

RENESAS Package code: PRSS0003AD-A

(Package name: TO-220FM)

1. Gate

2. Drain

3. Source

2 3

Rev.3.00 Sep 20, 2005 page 1 of 6

2SK2202-E Related Products

	2SK2202-E	2SK2202
Description	Silicon N Channel MOS FET	Silicon N Channel MOS FET
Is it Rohs certified?	conform to	incompatible
Parts packaging code	TO-220FM	TO-220AB
package instruction	SC-67, TO-220FM, 3 PIN	TO-220FM, 3 PIN
Contacts	3	3
Reach Compliance Code	compli	compli
ECCN code	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	120 V	120 V
Maximum drain current (Abs) (ID)	7 A	7 A
Maximum drain current (ID)	7 A	7 A
Maximum drain-source on-resistance	0.55 Ω	0.55 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e2	e0
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	20 W	20 W
Maximum pulsed drain current (IDM)	14 A	14 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	TIN COPPER	TIN LEAD
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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