2SK2202
Silicon N Channel MOS FET
REJ03G1002-0300
(Previous: ADE-208-139)
Rev.3.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
D
G
1. Gate
2. Drain
3. Source
1
2 3
S
Rev.3.00 Sep 20, 2005 page 1 of 6
2SK2202
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤10 µs,
duty cycle
≤
1 %
2. Value at Tc = 25
°
C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
Tch
Tstg
Ratings
120
±20
7
14
7
20
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note: 3. Pulse Test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
120
±20
—
—
1.0
—
—
3.0
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.3
0.35
5.0
420
140
35
9
50
140
65
1.35
320
Max
—
—
±10
250
2.0
0.4
0.55
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±16
V, V
DS
= 0
V
DS
= 100 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 4 A, V
GS
= 10 V*
3
I
D
= 4 A, V
GS
= 4 V*
3
I
D
= 4 A, V
DS
= 10 V*
3
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 4 A, V
GS
= 10 V,
R
L
= 7.5
Ω
I
F
= 7 A, V
GS
= 0
I
F
= 7 A, V
GS
= 0,
di
F
/ dt = 50 A /
µs
Rev.3.00 Sep 20, 2005 page 2 of 6
2SK2202
Main Characteristics
Power vs. Temperature Derating
40
20
10
Maximum Safe Operation Area
10
µs
10
0
µ
s
m
s
Channel Dissipation Pch (W)
Drain Current I
D
(A)
30
5
2
1
0.5
0.2
0.1
DC
PW
1
=
10
m
s
O
pe
r
20
(T
Operation in
c
=
this area is
25
limited by R
DS(on)
°
at
io
n
(1
sh
ot
)
C)
10
Ta = 25°C
2
5
10
20
50
100 200
0
50
100
150
200
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
10
10 V
Pulse Test
4V
3.5 V
6
3V
6V
10
Typical Transfer Characteristics
Drain Current I
D
(A)
Drain Current I
D
(A)
8
8
V
DS
= 10 V
Pulse Test
6
4
4
Tc = –25°C
25°C
75°C
1
2
3
4
5
2
V
GS
= 2.5 V
2
0
2
4
6
8
10
0
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.0
Pulse Test
I
D
= 5 A
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Drain to Source Saturation Voltage V
DS (on)
(V)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
1.6
2
1
0.5
Pulse Test
1.2
0.8
2A
0.4
1A
V
GS
= 4 V
0.2
0.1
0.1 0.2
10 V
0
4
8
12
16
20
0.5
1
2
5
10
20
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.3.00 Sep 20, 2005 page 3 of 6
2SK2202
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
y
fs
(S)
1.0
Pulse Test
I
D
= 5 A
2A
1A
V
GS
= 4 V
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
10
5
V
DS
= 10 V
Pulse Test
0.8
2
1
0.5
0.6
Tc = 75°C
25°C
–25°C
0.4
5A
1, 2 A
0.2
0
–40
10 V
0.2
0.1
0.1
0
40
80
120
160
0.2
0.5
1
2
5
10
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
1000
2000
1000
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Reverse Recovery Time trr (ns)
500
Capacitance C (pF)
500
200
100
50
20
10
Ciss
200
100
50
20
10
0.1
di / dt = 50 A /
µs,
V
GS
= 0
Ta = 25°C, Pulse Test
0.2
0.5
1
2
5
10
Coss
Crss
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
200
V
GS
Switching Characteristics
20
500
Gate to Source Voltage V
GS
(V)
I
D
= 7 A
120
V
DS
Switching Time t (ns)
160
16
200
100
50
20
10
5
3
0.1
0.2
0.5
1
V
GS
= 10 V
V
DD
= 30 V
PW = 2
µs
duty < 1 %
td(off)
tf
tr
12
V
DD
= 100 V
50 V
25 V
V
DD
= 100 V
50 V
25 V
80
8
40
4
0
40
td(on)
0
8
16
24
32
2
5
10
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.3.00 Sep 20, 2005 page 4 of 6
2SK2202
Reverse Drain Current vs.
Source to Drain Voltage
10
Reverse Drain Current I
DR
(A)
8
Pulse Test
6
4
10 V
2
5V
V
GS
= 0, –5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
S
(t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 6.25°C/W, Tc = 25°C
PDM
PW
T
0.03
0.01
10 µ
0.02
1
lse
0.0
pu
t
ho
1s
D=
PW
T
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
V
DD
= 30 V
Vout
Monitor
Vin
Vout
Vin
10 V
50
Ω
10%
10%
Waveforms
90%
10%
90%
td(on)
90%
td(off)
tf
tr
Rev.3.00 Sep 20, 2005 page 5 of 6
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