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2SK2220-E

Description
8 A, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size63KB,6 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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2SK2220-E Overview

8 A, N-CHANNEL, Si, POWER, MOSFET

2SK2220-E Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-3P
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts4
Manufacturer packaging codePRSS0004ZE-A4
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum drain current (Abs) (ID)8 A
Maximum drain current (ID)8 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)100 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2SK2220, 2SK2221
Silicon N Channel MOS FET
REJ03G1004-0200
(Previous: ADE-208-1352)
Rev.2.00
Sep 07, 2005
Application
Low frequency power amplifier
Complementary pair with 2SJ351, 2SJ352
Features
High power gain
Excellent frequency response
High speed switching
Wide area of safe operation
Enhancement-mode
Good complementary characteristics
Equipped with gate protection diodes
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
G
1. Gate
2. Source
(Flange)
3. Drain
1
2
S
3
Rev.2.00 Sep 07, 2005 page 1 of 5

2SK2220-E Related Products

2SK2220-E 2SK2221 2SK2220
Description 8 A, N-CHANNEL, Si, POWER, MOSFET 8 A, N-CHANNEL, Si, POWER, MOSFET 8 A, N-CHANNEL, Si, POWER, MOSFET
Is it lead-free? Lead free Contains lead Contains lead
Is it Rohs certified? conform to incompatible incompatible
Parts packaging code TO-3P TO-3P TO-3P
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 TO-3P, 3 PIN
Contacts 4 3 3
Reach Compliance Code compli unknow unknow
ECCN code EAR99 EAR99 EAR99
Shell connection SOURCE SOURCE SOURCE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Maximum drain current (ID) 8 A 8 A 8 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
JESD-609 code - e0 e0
Terminal surface - TIN LEAD TIN LEAD
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