2SK2220, 2SK2221
Silicon N Channel MOS FET
REJ03G1004-0200
(Previous: ADE-208-1352)
Rev.2.00
Sep 07, 2005
Application
Low frequency power amplifier
Complementary pair with 2SJ351, 2SJ352
Features
•
•
•
•
•
•
•
High power gain
Excellent frequency response
High speed switching
Wide area of safe operation
Enhancement-mode
Good complementary characteristics
Equipped with gate protection diodes
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
G
1. Gate
2. Source
(Flange)
3. Drain
1
2
S
3
Rev.2.00 Sep 07, 2005 page 1 of 5
2SK2220, 2SK2221
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
2SK2220
2SK2221
Symbol
V
DSX
V
GSS
I
D
I
DR
Pch*
1
Tch
Tstg
Ratings
180
200
±20
8
8
100
150
–55 to +150
Unit
V
V
A
A
W
°
C
°
C
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. Value at Tc = 25
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source
breakdown voltage
2SK2220
2SK2221
Gate to source breakdown voltage
Gate to source cutoff voltage
Drain to source saturation voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Note: 2. Pulse Test
Symbol
V
(BR)DSX
V
(BR)GSS
V
GS(off)
V
DS(sat)
|y
fs
|
Ciss
Coss
Crss
t
on
t
off
Min
180
200
±20
0.15
—
0.7
—
—
—
—
—
Typ
—
—
—
—
—
1.0
600
800
8
250
90
Max
—
—
—
1.45
12
1.4
—
—
—
—
—
Unit
V
V
V
V
S
pF
pF
pF
ns
ns
Test conditions
I
D
= 10 mA, V
GS
= –10 V
I
G
=
±100 µA,
V
DS
= 0
I
D
= 100 mA, V
DS
= 10 V
I
D
= 8 A, V
GD
= 0 V*
2
I
D
= 3 A, V
DS
= 10 V*
2
V
GS
= –5 V, V
DS
= 10 V,
f = 1 MHz
V
DD
= 30 V, I
D
= 4 A
Rev.2.00 Sep 07, 2005 page 2 of 5
2SK2220, 2SK2221
Main Characteristics
Power vs. Temperature Derating
150
20
Ta = 25°C
10
Maximum Safe Operation Area
Channel Dissipation Pch (W)
PW
=
PW
Drain Current I
D
(A)
10
100
5
D
C
m
s
=
10
0
m
s
pe
O
ra
(1
o
Sh
n
tio
(1
2
1.0
0.5
t)
o
Sh
t)
=
(T
C
25
50
2SK2220
°
C
)
2SK2221
0
50
100
150
0.2
5
10
20
50
100
200
500
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
10
V
GS
=
10 V
9
8
7
6
6
5
4
4
3
2
2
0
0
10
20
30
40
1
50
0
Pch = 125 W
T
C
= 25
°
C
10
Typical Output Characteristics
T
C
= 25
°
C
9
7
6
6
5
4
4
3
2
1
2
4
6
8
0
10
V
GS
= 10 V
8
Drain Current I
D
(A)
Drain Current I
D
(A)
8
8
2
Drain to Source Voltage V
DS
(V)
Drain to Source Voltage V
DS
(V)
Typical Transfer Characteristics
10
V
DS
= 10 V
1.0
Typical Transfer Characteristics
25
°
C
Drain Current I
D
(A)
Drain Current I
D
(A)
=–
25
25
=–
0.4
0.2
0
0.4
0.8
°
C
T
1.2
C
8
0.8
V
DS
= 10 V
T
C
6
75
0.6
4
2
0
2
4
6
8
10
1.6
75
2.0
Gate to Source Voltage V
GS
(V)
Gate to Source Voltage V
GS
(V)
Rev.2.00 Sep 07, 2005 page 3 of 5
25
2SK2220, 2SK2221
Forward Transfer Admittance
vs. Frequency
5
500
Forward Transfer Admittance
y
fs
(S)
Switching Time vs. Drain Current
Switching Time t on, t off (ns)
1.0
t
on
200
100
50
0.1
T
C
= 25°C
V
DS
= 10 V
I
D
= 2 A
t
off
0.01
20
10
5
0.1
0.001
0.0005
2k
10 k
100 k
1M
10 M 20 M
0.2
0.5
1.0
2
5
10
Frequency f (Hz)
Drain Current I
D
(A)
Switching Time Test Circuit
Output
R
L
Input
10%
t
on
Waveforms
90%
Input
t
off
10%
Output
90%
PW = 50
µs
duty ratio
= 1%
30 V
50
Ω
Rev.2.00 Sep 07, 2005 page 4 of 5
2SK2220, 2SK2221
Package Dimensions
JEITA Package Code
SC-65
RENESAS Code
PRSS0004ZE-A
Package Name
TO-3P / TO-3PV
MASS[Typ.]
5.0g
5.0 ± 0.3
Unit: mm
4.8 ± 0.2
1.5
15.6 ± 0.3
0.5
1.0
φ
3.2 ± 0.2
14.9 ± 0.2
19.9 ± 0.2
1.6
1.4 Max
2.0
2.8
2.0
1.0 ± 0.2
3.6
0.9
1.0
18.0 ± 0.5
0.6 ± 0.2
5.45 ± 0.5
5.45 ± 0.5
Ordering Information
Part Name
2SK2220-E
2SK2221-E
Quantity
360 pcs
360 pcs
Box (Tube)
Box (Tube)
Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 5 of 5
0.3
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